Radiation hardened micron and submicron MOSFETs containing fluorinated oxides

1989 ◽  
Vol 36 (6) ◽  
pp. 2116-2123 ◽  
Author(s):  
Y. Nishioka ◽  
K. Ohyu ◽  
Y. Ohji ◽  
M. Kato ◽  
E.F. da Silva ◽  
...  
Keyword(s):  
Radiation Hardened ◽  
Fluorinated Oxides

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Multichannel Radiation-Hardened Instrumentation Amplifier for Sensor Systems and Analog Interfaces of Demanding Application

2016 ◽  
Vol 18 (1) ◽  
pp. 76-86
Author(s):  
N.N. Prokopenko ◽  
N.V. Butyrlagin ◽  
A.V. Bugakova ◽  
A.A. Ignashin
Keyword(s):  
Instrumentation Amplifier ◽  
Sensor Systems ◽  
Radiation Hardened

РАДИАЦИОННО СТОЙКОЕ КМОП СТАТИЧЕСКОЕ ОЗУ 16 МБИТ 1657РУ2У

2020 ◽  
Vol 96 (3s) ◽  
pp. 169-174
Author(s):  
Ю.М. Герасимов ◽  
Н.Г. Григорьев ◽  
А.В. Кобыляцкий ◽  
Я.Я. Петричкович
Keyword(s):  
Total Dose ◽  
Heavy Particles ◽  
Topological Features ◽  
Radiation Hardened ◽  
Latch Up

Рассматриваются архитектурные, схемотехнические и конструктивно-топологические особенности асинхронного радиационно стойкого ОЗУ 1657РУ2У емкостью 16 Мбит с организацией (1Мx16)/(2Mx8), изготавливаемого по коммерческой КМОП-технологии объемного кремния уровня 130 нм. СБИС ОЗУ нечувствительна к эффекту «защелкивания», имеет повышенные дозовую стойкость и сбоеустойчивость при воздействии отдельных ядерных частиц (ОЯЧ), протонов и нейтронов (ТЧ). The paper highlights architectural, schematic and topological features of the radiation hardened 16 Mbit CMOS SRAM with configurable organization 1Mx16/2Mx8, which is immune to latch-up and with improved total dose and heavy particles tolerance.

Nonvolatile Spin-Based Radiation Hardened Retention Latch and Flip-Flop

2019 ◽  
Vol 18 ◽  
pp. 1089-1096 ◽  
Author(s):  
Abdolah Amirany ◽  
Fahimeh Marvi ◽  
Kian Jafari ◽  
Ramin Rajaei
Keyword(s):  
Flip Flop ◽  
Radiation Hardened

Radiation Hardened Millimeter-Wave Receiver Implemented in 90nm, SiGe HBT Technology

2021 ◽  
pp. 1-1
Author(s):  
Ebrahim M. Al Seragi ◽  
Subhra Dash ◽  
K. Muthuseenu ◽  
John D. Cressler ◽  
Hugh J. Barnaby ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Sige Hbt ◽  
Radiation Hardened ◽  
Millimeter Wave Receiver

scholarly journals Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1572
Author(s):  
Ehab A. Hamed ◽  
Inhee Lee
Keyword(s):  
Soft Error ◽  
Error Tolerance ◽  
Cmos Process ◽  
Flip Flop ◽  
Single Event Upsets ◽  
Area Overhead ◽  
Fair Comparison ◽  
Reference Design ◽  
Radiation Hardened ◽  
Radiation Hardened By Design

In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.

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