Are hydrogenated amorphous silicon arrays usable for tomographic imaging?

1994 ◽  
Vol 41 (4) ◽  
pp. 1516-1521 ◽  
Author(s):  
N.H. Clinthorne
1993 ◽  
Vol 20 (3) ◽  
pp. 825-825 ◽  
Author(s):  
Larry E. Antonuk ◽  
John Boudry ◽  
Weidong Huang ◽  
Daniel L. McShan ◽  
Edward J. Morton ◽  
...  

1991 ◽  
Vol 219 ◽  
Author(s):  
L. E. Antonuk ◽  
J. Yorkston ◽  
C. W. Kim ◽  
W. Huang ◽  
E. J. Morton ◽  
...  

ABSTRACTLight-sensitive hydrogenated amorphous silicon pixel arrays are now under development for real-time megavoltage and diagnostic fluoroscopic imaging. Such applications place stringent demands upon a variety of array properties including the uniformity of the light-response function of the pixels. It is desirable that the design and fabrication of these imaging arrays maximize such uniformity. The implications of uniformity for imaging are reviewed, and data obtained from small arrays are presented and discussed.


1992 ◽  
Vol 19 (6) ◽  
pp. 1455-1466 ◽  
Author(s):  
Larry E. Antonuk ◽  
John Boudry ◽  
Weidong Huang ◽  
Daniel L. McShan ◽  
Edward J. Morton ◽  
...  

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.


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