Total dose characterization of a CMOS technology at high dose rates and temperatures

1988 ◽  
Vol 35 (6) ◽  
pp. 1557-1562 ◽  
Author(s):  
J.S. Browning ◽  
M.P. Connors ◽  
C.L. Freshman ◽  
G.A. Finney
Keyword(s):  
Total Dose ◽  
Cmos Technology ◽  
High Dose ◽  
Dose Rates

Electron Beam Damage of Biomolecules Assessed by Energy Loss Spectroscopy

1978 ◽  
Vol 36 (3) ◽  
pp. 61-69
Author(s):  
M. Isaacson ◽  
M.L. Collins ◽  
M. Listvan
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Structural Integrity ◽  
Analytical Electron Microscopy ◽  
High Dose ◽  
Dose Rates ◽  
Special Cases ◽  
Analytical Electron ◽  
Atom Migration ◽  
Beam Damage

Over the past five years it has become evident that radiation damage provides the fundamental limit to the study of blomolecular structure by electron microscopy. In some special cases structural determinations at very low doses can be achieved through superposition techniques to study periodic (Unwin & Henderson, 1975) and nonperiodic (Saxton & Frank, 1977) specimens. In addition, protection methods such as glucose embedding (Unwin & Henderson, 1975) and maintenance of specimen hydration at low temperatures (Taylor & Glaeser, 1976) have also shown promise. Despite these successes, the basic nature of radiation damage in the electron microscope is far from clear. In general we cannot predict exactly how different structures will behave during electron Irradiation at high dose rates. Moreover, with the rapid rise of analytical electron microscopy over the last few years, nvicroscopists are becoming concerned with questions of compositional as well as structural integrity. It is important to measure changes in elemental composition arising from atom migration in or loss from the specimen as a result of electron bombardment.

Electron-diffraction studies in synthetic polymer materials

1983 ◽  
Vol 41 ◽  
pp. 362-365
Author(s):  
D.T. Grubb
Keyword(s):  
Electron Diffraction ◽  
Synthetic Polymer ◽  
Polymer Materials ◽  
Crystallographic Structure ◽  
High Dose ◽  
Electron Dose ◽  
Dose Rates ◽  
First Case ◽  
Diffraction Patterns ◽  
The Many

Diffraction studies in polymeric and other beam sensitive materials may bring to mind the many experiments where diffracted intensity has been used as a measure of the electron dose required to destroy fine structure in the TEM. But this paper is concerned with a range of cases where the diffraction pattern itself contains the important information.In the first case, electron diffraction from paraffins, degraded polyethylene and polyethylene single crystals, all the samples are highly ordered, and their crystallographic structure is well known. The diffraction patterns fade on irradiation and may also change considerably in a-spacing, increasing the unit cell volume on irradiation. The effect is large and continuous far C94H190 paraffin and for PE, while for shorter chains to C 28H58 the change is less, levelling off at high dose, Fig.l. It is also found that the change in a-spacing increases at higher dose rates and at higher irradiation temperatures.

Clinical Characterization of High-Dose Gamma-Hydroxybutyric Acid (GHB) Intoxication

2006 ◽  
Author(s):  
Matthew W. Johnson ◽  
Lawrence P. Carter ◽  
Annie Umbricht ◽  
Roland R. Griffiths
Keyword(s):  
High Dose ◽  
Hydroxybutyric Acid

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

scholarly journals Commissioning of a clinical pencil beam scanning proton therapy unit for ultra‐high dose rates (FLASH)

2021 ◽  
Author(s):  
Konrad P. Nesteruk ◽  
Michele Togno ◽  
Martin Grossmann ◽  
Anthony J. Lomax ◽  
Damien C. Weber ◽  
...  
Keyword(s):  
Proton Therapy ◽  
High Dose ◽  
Pencil Beam ◽  
Beam Scanning ◽  
Dose Rates ◽  
Pencil Beam Scanning

Alpha-Interferon (Wellferon) as an Adjunct to Standard Surgical Therapy in the Management of Recurrent Respiratory Papillomatosis

1988 ◽  
Vol 97 (4) ◽  
pp. 376-380 ◽  
Author(s):  
Bruce N. Benjamin ◽  
Henley Harrison ◽  
Paul A. Gatenby ◽  
Kaye Cameron ◽  
Robert Kitchen ◽  
...  
Keyword(s):  
Complete Remission ◽  
Crossover Study ◽  
Total Dose ◽  
Laser Therapy ◽  
Partial Remission ◽  
Recurrent Respiratory Papillomatosis ◽  
Alpha Interferon ◽  
High Dose ◽  
Daily Dose

Ten patients received lymphoblastoid alpha-interferon (Wellferon) in a crossover study so that Wellferon and standard microsurgical laryngeal laser therapy could be compared to laser therapy alone. Wellferon was administered initially at an intravenous high dose of 15 megaunits/m2 for 5 days followed by a daily dose of 2 megaunits/m2 subcutaneously for 6 months. Dosage was adjusted according to predefined toxicity. One patient was withdrawn from the study. Of the others, all but one received over 75 % of the planned total dose. At follow-up of the nine assessable patients, complete remission was achieved in two of them, partial remission in four, and no response in the remainder. The two complete remissions were sustained for 2 years, but the four partial remissions were not sustained. Thus, a role for alpha-interferon in the kind of regimen used here remains to be established.

Total-dose characterization of CMOS/SOI-ZMR technology

1992 ◽  
Vol 39 (3) ◽  
pp. 381-386 ◽  
Author(s):  
O. Coumar ◽  
R. Gaillard
Keyword(s):  
Total Dose

Characterization of sub-THz detection array in 0.18 μm CMOS technology

2016 ◽  
Author(s):  
Jixin Chen ◽  
Weitian Liu ◽  
Pinpin Yan ◽  
Chenwei Jia ◽  
Debing Hou ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Thz Detection

OC-0634: Correction for ion recombination in a built-in monitor chamber at ultra-high dose rates

2020 ◽  
Vol 152 ◽  
pp. S353-S354
Author(s):  
E. Konradsson ◽  
M. Lempart ◽  
B. Blad ◽  
C. Ceberg ◽  
K. Petersson
Keyword(s):  
High Dose ◽  
Dose Rates ◽  
Ion Recombination

Survival of mammalian cells exposed to X rays at ultra-high dose-rates

1969 ◽  
Vol 42 (494) ◽  
pp. 102-107 ◽  
Author(s):  
Roger J. Berry ◽  
Eric J. Hall ◽  
David W. Forster ◽  
Thomas H. Storr ◽  
Michael J. Goodman
Keyword(s):  
Mammalian Cells ◽  
High Dose ◽  
X Rays ◽  
Dose Rates
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