Temperature variable noise and electrical characteristics of Au-Ga-As Schottky barrier millimeter-wave mixer diodes

1988 ◽  
Vol 36 (11) ◽  
pp. 1469-1475 ◽  
Author(s):  
H.H.G. Zirath ◽  
S.M. Nilsen ◽  
H. Hjelmgren ◽  
L.P. Ramberg ◽  
E.L. Kollberg
Keyword(s):  
Schottky Barrier ◽  
Millimeter Wave ◽  
Electrical Characteristics ◽  
Temperature Variable

Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode

2010 ◽  
Vol 518 (15) ◽  
pp. 4375-4379 ◽  
Author(s):  
Savaş Sönmezoğlu ◽  
Sevilay Şenkul ◽  
Recep Taş ◽  
Güven Çankaya ◽  
Muzaffer Can
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Electrical Characteristics

The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

2010 ◽  
Vol 118 (1) ◽  
pp. 596-603 ◽  
Author(s):  
İ. Taşçıoğlu ◽  
H. Uslu ◽  
Ş. Altındal ◽  
P. Durmuş ◽  
İ. Dökme ◽  
...  
Keyword(s):  
Polyvinyl Alcohol ◽  
Gamma Irradiation ◽  
Schottky Barrier ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes

Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes

2016 ◽  
Vol 858 ◽  
pp. 213-216 ◽  
Author(s):  
Koji Kamei ◽  
Ling Guo ◽  
Kenji Momose ◽  
Hitoshi Osawa
Keyword(s):  
Schottky Barrier ◽  
Shape Change ◽  
Reverse Direction ◽  
Electrical Characteristics ◽  
Line Defect ◽  
Reverse Voltage ◽  
Step Flow ◽  
Straight Line ◽  
Poly Type ◽  
Line Defects

We have investigated the “straight-line defect,” which has not been classified separately and is quite similar to the carrot defect. We found that the straight-line defect differed structurally from the carrot defect. The presence of a particle on the substrate-epi layer interface seemed to be the cause of the defect; a layer of poly-type (3C-SiC) extended from the particle to the epi-layer surface. The straight-line defect likely resulted from shape change from the 3C-SiC triangular defect. This change in shape from triangular to straight-line defects depended on the C/Si ratio. To investigate the electrical characteristics, we fabricated a Schottky barrier diode (SBD) structure on a silicon carbide (SiC) epi wafer. With application of a high voltage, destruction occurred on both the upstream and the downstream side of the step flow of straight-line defects in the reverse voltage test. This reverse direction characteristic differed from that observed with triangular defects.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

scholarly journals Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 636
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Muhammad Haroon Rashid
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Doping Profile ◽  
Structural Defects ◽  
Diffusion Welding ◽  
Native Oxide Layer ◽  
Electrical Characteristics ◽  
Discrete Energy Level ◽  
P Type

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

Electrical Characteristics of AlGaN/GaN Schottky Barrier Diodes with Different Capping Layers

2016 ◽  
Vol 16 (11) ◽  
pp. 11635-11639
Author(s):  
Taeyoung Yang ◽  
Minjun Kim ◽  
Jae Hoon Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes
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