Performance and limitations of decomposition-based parameter extraction procedures for FET small-signal models

1998 ◽  
Vol 46 (11) ◽  
pp. 1620-1627 ◽  
Author(s):  
C. van Niekerk ◽  
P. Meyer
Keyword(s):  
Parameter Extraction ◽  
Small Signal ◽  
Extraction Procedures ◽  
Signal Models

scholarly journals A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 266
Author(s):  
Ruirui Dang ◽  
Lijie Yang ◽  
Zhihao Lv ◽  
Chunyi Song ◽  
Zhiwei Xu
Keyword(s):  
Parameter Extraction ◽  
New Method ◽  
Small Signal ◽  
Gate Bias ◽  
Large Signal ◽  
S Parameter ◽  
Proposed Model ◽  
Measurement Results ◽  
Parasitic Parameter ◽  
Signal Models

Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.

A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit

2015 ◽  
Vol 85 (3) ◽  
pp. 405-411 ◽  
Author(s):  
Zhang Jincan ◽  
Liu Bo ◽  
Zhang Leiming ◽  
Sun Ligong ◽  
Wang Jinchan ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Small Signal

A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

2005 ◽  
Vol 10 (2) ◽  
pp. 405-409
Author(s):  
Shi Xin-zhi ◽  
Liu Hai-wen ◽  
Sun Xiao-wei ◽  
Che Yan-feng ◽  
Cheng Zhi-qun ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

scholarly journals DC Characterization and Fast Small-Signal Parameter Extraction of Organic Thin Film Transistors With Different Geometries

2020 ◽  
Vol 41 (10) ◽  
pp. 1512-1515
Author(s):  
August Arnal ◽  
Albert Crespo-Yepes ◽  
Eloi Ramon ◽  
Lluis Teres ◽  
Rosana Rodriguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Organic Thin Film Transistors ◽  
Small Signal ◽  
Organic Thin Film ◽  
Signal Parameter ◽  
Dc Characterization
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