High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

1990 ◽  
Vol 38 (12) ◽  
pp. 2016-2017 ◽  
Author(s):  
C. Yuen ◽  
C. Nishimoto ◽  
Y.C. Pao ◽  
M. Day ◽  
S. Bandy ◽  
...  
Keyword(s):  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Distributed Amplifiers

High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

2002 ◽  
Author(s):  
C. Yuen ◽  
C. Nishimoto ◽  
M. Glenn ◽  
C. Webb ◽  
S. Bandy ◽  
...  
Keyword(s):  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Distributed Amplifiers

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

HIGH FREQUENCY CIRCUITS BASED ON GaAs PHEMT TECHNOLOGY FOR MODERN SENSOR AND COMMUNICATION SYSTEMS

2000 ◽  
Vol 10 (01) ◽  
pp. 393-411 ◽  
Author(s):  
M. SCHLECHTWEG
Keyword(s):  
Integrated Circuits ◽  
Communication Systems ◽  
High Speed ◽  
Coplanar Waveguide ◽  
High Gain ◽  
Low Noise ◽  
Phase Shifters ◽  
60 Ghz ◽  
Sensor Applications ◽  
High Speed Data

For sensor and communication system applications, monolithic microwave integrated circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of PHEMT ICs for communication and sensor applications up to 100 GHz is discussed. Specifically, I will address the application of coplanar waveguide technology for rf ICs, millimeter-wave multifunctional ICs and power amplifiers, as well as mixed-signal ICs and OEICs. A 77-GHz transceiver MMIC designed for automotive collision avoidance radar is presented as an example of a very compact, multifunctional mm-wave chip. A chip set for active and passive imaging at 94 GHz includes low noise and high gain amplifiers, low phase noise oscillators, and phase shifters. An FMCW module is conceived for material characterization. A family of coplanar power amplifier MMICs for wireless communication in the range of 20 to 60 GHz with output powers up to 1 W is presented. Finally, integrated circuits for high-speed data transmission at 40 Gbit/s will be discussed.

A Low-Noise, High-Gain Quasi-Millimeter-Wave Receiver MMIC with a Very High Degree of Integration Using 3D-MMIC Technology

2011 ◽  
Vol E94-C (10) ◽  
pp. 1548-1556 ◽  
Author(s):  
Takana KAHO ◽  
Yo YAMAGUCHI ◽  
Kazuhiro UEHARA ◽  
Kiyomichi ARAKI
Keyword(s):  
Millimeter Wave ◽  
High Gain ◽  
Low Noise ◽  
High Degree ◽  
Very High ◽  
Millimeter Wave Receiver

A 60 GHz High Gain Transformer-Coupled Differential Cascode Power Amplifier in 65 nm CMOS

2011 ◽  
Vol E94-C (10) ◽  
pp. 1508-1514
Author(s):  
Jenny Yi-Chun LIU ◽  
Mau-Chung Frank CHANG
Keyword(s):  
Power Amplifier ◽  
High Gain ◽  
60 Ghz

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

Sign in / Sign up

Export Citation Format

Share Document