Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies

1995 ◽  
Vol 43 (2) ◽  
pp. 293-298 ◽  
Author(s):  
J.P. Roux ◽  
L. Escotte ◽  
R. Plana ◽  
J. Graffeuil ◽  
S.L. Delage ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Noise Model ◽  
Extraction Technique ◽  
Small Signal ◽  
Microwave Frequencies ◽  
Model Extraction

A nonquasi-static table-based small-signal model of heterojunction bipolar transistor

2002 ◽  
Vol 49 (10) ◽  
pp. 1681-1686 ◽  
Author(s):  
Sangsoo Ko ◽  
Kyungmin Koh ◽  
Hyun-Min Park ◽  
Songcheol Hong
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model

A combined technique for amplifier oriented small‐signal noise model extraction

2020 ◽  
Vol 30 (9) ◽  
Author(s):  
Artem Popov ◽  
Dmitry Bilevich ◽  
Andrei Salnikov ◽  
Igor Dobush ◽  
Aleksandr Goryainov ◽  
...  
Keyword(s):  
Noise Model ◽  
Small Signal ◽  
Signal Noise ◽  
Model Extraction ◽  
Combined Technique

Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

1999 ◽  
Vol 46 (4) ◽  
pp. 634-640 ◽  
Author(s):  
D.A. Ahmari ◽  
G. Raghavan ◽  
Q.J. Hartmann ◽  
M.L. Hattendorf ◽  
M. Feng ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Small Signal

scholarly journals An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes

2019 ◽  
Vol 30 ◽  
pp. 01001
Author(s):  
Artem Popov ◽  
Dmitry Bilevich ◽  
Andrei Salnikov ◽  
Igor Dobush ◽  
Aleksandr Goryainov ◽  
...  
Keyword(s):  
Analytical Approach ◽  
Extraction Technique ◽  
Small Signal ◽  
Automated Extraction ◽  
Signal Modeling ◽  
Model Extraction ◽  
Performance Capability ◽  
Small Signal Modeling

A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured by different semiconductor fabs.

Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs

2015 ◽  
Vol 30 (1) ◽  
pp. e2135 ◽  
Author(s):  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Riccardo Cleriti ◽  
Mirko Palomba ◽  
Ernesto Limiti
Keyword(s):  
Noise Model ◽  
Small Signal ◽  
Model Extraction
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