scholarly journals Embedding impedance approximations in the analysis of SIS mixers

1993 ◽  
Vol 41 (4) ◽  
pp. 590-594 ◽  
Author(s):  
A.R. Kerr ◽  
S.-K. Pan ◽  
S. Withington
Keyword(s):  
Embedding Impedance

scholarly journals Wide-Band Tunerless Mixer Mounts for 100 GHz and 150 GHz SIS receivers

1994 ◽  
Vol 140 ◽  
pp. 78-81
Author(s):  
K. Sunada ◽  
R. Kawabe ◽  
J. Inatani
Keyword(s):  
Noise Temperature ◽  
Wide Band ◽  
Wide Frequency Range ◽  
Low Noise ◽  
Frequency Range ◽  
Sis Receiver ◽  
Embedding Impedance

AbstractThe performance of the new SIS receiver systems at the Nobeyama Millimeter Array are described. These receivers operate at 100 GHz and 150 GHz bands and tunerless mixer mounts have been adopted. These receivers show very low noise temperature (< 50 K) over a very wide frequency range because of the large embedding impedance range.

An Investigation of the Performance of the Superconducting HEB Mixer as a Function of Its RF Embedding Impedance

2005 ◽  
Vol 15 (2) ◽  
pp. 472-475 ◽  
Author(s):  
D. Loudkov ◽  
C.-Y.E. Tong ◽  
R. Blundell ◽  
N. Kaurova ◽  
E. Grishina ◽  
...  
Keyword(s):  
Embedding Impedance

Embedding Impedance Measurements for mm-Wave SIS Mixers

1985 ◽  
Author(s):  
A.V. Raisanen ◽  
W.R. McGrath ◽  
D.G. Crete ◽  
P.L. Richards
Keyword(s):  
Impedance Measurements ◽  
Embedding Impedance

Integrated GaAs Diode Technology for Millimeter and Submillimeter-wave Components and Systems

2000 ◽  
Vol 631 ◽  
Author(s):  
Thomas W. Crowe ◽  
Jeffrey L. Hesler ◽  
William L. Bishop ◽  
Willie E. Bowen ◽  
Richard F. Bradley ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Flip Chip ◽  
Quartz Substrate ◽  
Submillimeter Wave ◽  
Bonding Process ◽  
Circuit Performance ◽  
Embedding Impedance ◽  
Compact Range ◽  
The Cost

ABSTRACTGaAs Schottky barrier diodes remain a workhorse technology for submillimeter-wave applications including radio astronomy, chemical spectroscopy, atmospheric studies, plasma diagnostics and compact range radar. This is because of the inherent speed of these devices and their ability to operate at room temperature. Although planar (flip-chip and beam-lead) diodes are replacing whisker contacted diodes throughout this frequency range, the handling and placement of such small GaAs chips limits performance and greatly increases component costs. Through the use of a novel wafer bonding process we have fabricated and tested submillimeter-wave components where the GaAs diode is integrated on a quartz substrate along with other circuit elements such as filters, probes and bias lines. This not only eliminates the cost of handling microscopically small chips, but also improves circuit performance. This is because the parasitic capacitance is reduced by the elimination of the GaAs substrate and the electrical embedding impedance seen by the diodes is more precisely controlled. Our wafer bonding process has been demonstrated through the fabrication and testing of a fundamental mixer at 585 GHz (Tmix < 1200K) and a 380 GHz subharmonically pumped mixer (Tmix < 1000K). This paper reviews the wafer bonding process and discusses how it can be used to greatly improve the performance and manufacturability of submillimeter-wave components.

Measurement and study of the embedding impedance presented by the whisker antenna of a schottky diode corner cube mixer

1994 ◽  
Vol 15 (11) ◽  
pp. 1867-1881 ◽  
Author(s):  
C. M. Mann ◽  
T. Nozokido ◽  
J. J. Chang ◽  
T. Suzuki ◽  
K. Mizuno
Keyword(s):  
Schottky Diode ◽  
Corner Cube ◽  
Embedding Impedance
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