Anisotropic magnetoresistance as a probe of magnetization reversal in individual nono-sized nickel wires

1998 ◽  
Vol 34 (4) ◽  
pp. 903-905 ◽  
Author(s):  
J.-E. Wegrowe ◽  
S.E. Gilbert ◽  
D. Kelly ◽  
B. Doudin ◽  
J.-P. Ansermet
Keyword(s):  
Magnetization Reversal ◽  
Anisotropic Magnetoresistance

Magnetization reversal and anisotropic magnetoresistance behavior in bicomponent antidot nanostructures

2010 ◽  
Vol 97 (4) ◽  
pp. 042512 ◽  
Author(s):  
D. Tripathy ◽  
P. Vavassori ◽  
J. M. Porro ◽  
A. O. Adeyeye ◽  
N. Singh
Keyword(s):  
Magnetization Reversal ◽  
Anisotropic Magnetoresistance

ROOM-TEMPERATURE ANTIFERROMAGNETIC TUNNELING ANISOTROPIC MAGNETORESISTANCE

SPIN ◽  
2013 ◽  
Vol 03 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. Y. WANG ◽  
C. SONG ◽  
B. CUI ◽  
G. Y. WANG ◽  
F. ZENG ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Electrical Transport ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Anisotropic Magnetoresistance ◽  
Operation Temperature ◽  
Exchange Spring ◽  
Unidirectional Anisotropy

We systematically investigate the room-temperature antiferromagnetic tunneling anisotropic magnetoresistance (TAMR) effect in [Pt/Co] / IrMn/AlO x/ Pt vertical tunnel junctions as a function of IrMn thicknesses and field directions. The experimental results indicate that a partial rotation of IrMn moments is triggered by ferromagnetic Co/Pt with the formation of exchange-spring in vertical fields, whereas two distinct modes of positive and negative spin-valve-like signals are detected with different in-plane fields due to the unidirectional anisotropy of IrMn . Electrical transport and magnetization reversal measurements confirm the crucial role of stable antiferromagnetic IrMn moments in the observed TAMR effect, which is profoundly affected by the operation temperature, IrMn thicknesses, magnetic fields and field directions.

scholarly journals Multiple Transitions in Permalloy Half-Ring Wires with Finite-Size Effect

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1384
Author(s):  
Cheng-Yi Wu ◽  
Shiow-Kang Yen
Keyword(s):  
Domain Wall ◽  
External Field ◽  
Size Effect ◽  
Magnetization Reversal ◽  
Applied Field ◽  
Finite Size ◽  
Finite Size Effect ◽  
Anisotropic Magnetoresistance ◽  
In Series

Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices.

scholarly journals Tailoring the magnetic anisotropy, magnetization reversal, and anisotropic magnetoresistance of Ni films by ion sputtering

2015 ◽  
Vol 91 (10) ◽  
Author(s):  
Hao-liang Liu ◽  
Tomáš Škereň ◽  
Alexander Volodin ◽  
Kristiaan Temst ◽  
André Vantomme ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Anisotropic Magnetoresistance ◽  
Ion Sputtering

Magnetization reversal in exchange biased Co/CoO probed with anisotropic magnetoresistance

2002 ◽  
Vol 91 (10) ◽  
pp. 7760 ◽  
Author(s):  
Thomas Gredig ◽  
Ilya N. Krivorotov ◽  
E. Dan Dahlberg
Keyword(s):  
Magnetization Reversal ◽  
Anisotropic Magnetoresistance

scholarly journals Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Kyung Jae Lee ◽  
Sangyeop Lee ◽  
Seul-Ki Bac ◽  
Seonghoon Choi ◽  
Hakjoon Lee ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Anisotropic Magnetoresistance
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