scholarly journals High coercive field and film stress for epitaxial monolayers of Fe on W(110)

1996 ◽  
Vol 32 (5) ◽  
pp. 4570-4572 ◽  
Author(s):  
D. Sander ◽  
A. Enders ◽  
R. Skomski ◽  
J. Kirschner
Keyword(s):  
Coercive Field ◽  
Film Stress ◽  
High Coercive Field

scholarly journals Templated grain growth of high coercive field CuO‐doped textured PYN‐PMN‐PT ceramics

2020 ◽  
Vol 103 (11) ◽  
pp. 6149-6156 ◽  
Author(s):  
Michael J. Brova ◽  
Beecher H. Watson ◽  
Rebecca L. Walton ◽  
Elizabeth R. Kupp ◽  
Mark A. Fanton ◽  
...  
Keyword(s):  
Grain Growth ◽  
Coercive Field ◽  
Templated Grain Growth ◽  
High Coercive Field

scholarly journals Processing and electromechanical properties of high‐coercive field ZnO‐doped PIN‐PZN‐PT ceramics

2020 ◽  
Vol 103 (9) ◽  
pp. 4794-4802 ◽  
Author(s):  
Michael J. Brova ◽  
Beecher H. Watson ◽  
Rebecca L. Walton ◽  
Elizabeth R. Kupp ◽  
Mark A. Fanton ◽  
...  
Keyword(s):  
Coercive Field ◽  
Electromechanical Properties ◽  
High Coercive Field

High Coercive Field and Magnetization Reversal in Core–Shell Cum Nanotwin Driven Ni/NiO Nanospheres

2011 ◽  
Vol 11 (3) ◽  
pp. 2632-2635
Author(s):  
Gunadhor S. Okram ◽  
Ajay Soni ◽  
D. T. Adroja ◽  
N. P. Lalla ◽  
T. Shripathi
Keyword(s):  
Magnetization Reversal ◽  
Coercive Field ◽  
Core Shell ◽  
High Coercive Field

scholarly journals Isotropic, high coercive field in melt-spun tetragonal Heusler Mn3Ge

APL Materials ◽  
2016 ◽  
Vol 4 (8) ◽  
pp. 086113 ◽  
Author(s):  
Adel Kalache ◽  
Guido Kreiner ◽  
Siham Ouardi ◽  
Susanne Selle ◽  
Christian Patzig ◽  
...  
Keyword(s):  
Coercive Field ◽  
Melt Spun ◽  
High Coercive Field

scholarly journals Spin Seebeck effect in ɛ-Fe2O3 thin films with high coercive field

2018 ◽  
Vol 124 (21) ◽  
pp. 213904 ◽  
Author(s):  
K. Knížek ◽  
M. Pashchenko ◽  
P. Levinský ◽  
O. Kaman ◽  
J. Houdková ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Seebeck Effect ◽  
Spin Seebeck Effect ◽  
High Coercive Field

Hard magnetic ferrites with high coercive field

1997 ◽  
Vol 48 (6) ◽  
pp. 1319-1324 ◽  
Author(s):  
M. Feder ◽  
Maria Popescu ◽  
E. Segal ◽  
N. Dragoe ◽  
D. Crisan ◽  
...  
Keyword(s):  
Coercive Field ◽  
High Coercive Field ◽  
Magnetic Ferrites

High Coercive Field for Nanoparticles of CoFe2O4 in Amorphous Silica Sol–Gel

2003 ◽  
Vol 15 (19) ◽  
pp. 1622-1625 ◽  
Author(s):  
A. Hutlova ◽  
D. Niznansky ◽  
J.-L. Rehspringer ◽  
C. Estournès ◽  
M. Kurmoo
Keyword(s):  
Amorphous Silica ◽  
Coercive Field ◽  
Sol Gel ◽  
Silica Sol ◽  
High Coercive Field

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

Parallel Glide: A Fundamentally Different Type of Dislocation Motion in Ultrathin Metal Films

2003 ◽  
Vol 779 ◽  
Author(s):  
T. John Balk ◽  
Gerhard Dehm ◽  
Eduard Arzt
Keyword(s):  
Thermal Cycling ◽  
Grain Boundaries ◽  
Film Surface ◽  
Metal Films ◽  
Geometric Constraints ◽  
Film Stress ◽  
Diffusional Creep ◽  
Creep Model ◽  
Substrate Interface ◽  
Film Substrate

AbstractWhen confronted by severe geometric constraints, dislocations may respond in unforeseen ways. One example of such unexpected behavior is parallel glide in unpassivated, ultrathin (200 nm and thinner) metal films. This involves the glide of dislocations parallel to and very near the film/substrate interface, following their emission from grain boundaries. In situ transmission electron microscopy reveals that this mechanism dominates the thermomechanical behavior of ultrathin, unpassivated copper films. However, according to Schmid's law, the biaxial film stress that evolves during thermal cycling does not generate a resolved shear stress parallel to the film/substrate interface and therefore should not drive such motion. Instead, it is proposed that the observed dislocations are generated as a result of atomic diffusion into the grain boundaries. This provides experimental support for the constrained diffusional creep model of Gao et al.[1], in which they described the diffusional exchange of atoms between the unpassivated film surface and grain boundaries at high temperatures, a process that can locally relax the film stress near those boundaries. In the grains where it is observed, parallel glide can account for the plastic strain generated within a film during thermal cycling. One feature of this mechanism at the nanoscale is that, as grain size decreases, eventually a single dislocation suffices to mediate plasticity in an entire grain during thermal cycling. Parallel glide is a new example of the interactions between dislocations and the surface/interface, which are likely to increase in importance during the persistent miniaturization of thin film geometries.

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