Sputter deposition of magnetic thin films onto plastic: the effect of undercoat and spacer layer composition on the magnetic properties of multilayer permalloy thin films

1995 ◽  
Vol 31 (6) ◽  
pp. 4109-4111 ◽  
Author(s):  
C.A. Grimes
2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.


1983 ◽  
Vol 35 (1-3) ◽  
pp. 89-92 ◽  
Author(s):  
J.W. Smits ◽  
H.A. Algra ◽  
U. Enz ◽  
R.P. van Stapele

2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.


2012 ◽  
Vol 365 ◽  
pp. 012003 ◽  
Author(s):  
Marco Coïsson ◽  
Gabriele Barrera ◽  
Federica Celegato ◽  
Paola Tiberto ◽  
Franco Vinai

2002 ◽  
Vol 91 (10) ◽  
pp. 8462 ◽  
Author(s):  
Y. M. Kim ◽  
S. H. Han ◽  
H. J. Kim ◽  
D. Choi ◽  
K. H. Kim ◽  
...  

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