Properties of ion-beam deposited YBCO thin films

1991 ◽  
Vol 27 (2) ◽  
pp. 1463-1466 ◽  
Author(s):  
K. Li ◽  
J.E. Johnson
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ybco Thin Films

Ion-beam milling of YBCO thin films and their characterization by time-resolved pump-probe method

1999 ◽  
Vol 9 (2) ◽  
pp. 1952-1955 ◽  
Author(s):  
M. Hangyo ◽  
S. Nashima ◽  
M. Kawamura ◽  
S. Shikii ◽  
M. Tonouchi
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Probe Method ◽  
Time Resolved ◽  
Pump Probe ◽  
Ybco Thin Films

Mechanism of a–c oriented crystal growth of YBCO thin films by ion beam sputtering

2001 ◽  
Vol 229 (1-4) ◽  
pp. 321-324 ◽  
Author(s):  
T Endo ◽  
KI Itoh ◽  
A Hashizume ◽  
H Kohmoto ◽  
E Takahashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Oriented Crystal ◽  
Ybco Thin Films ◽  
Beam Sputtering

THE PREPARATION OF YBCO THIN FILMS BY A FOUR ION BEAM CO-DEPOSITION SYSTEM

1989 ◽  
pp. 419-427
Author(s):  
S. MICHEL ◽  
J.H. JAMES ◽  
B. DWIR ◽  
M. AFFRONTE ◽  
B. KELLETT ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ybco Thin Films

Structural and Electrical Properties of Biaxially Textured YBa2Cu3O7-x Thin Films on Buffered Ni-based Alloy Substrates

2000 ◽  
Vol 659 ◽  
Author(s):  
M. Li ◽  
B. Ma ◽  
Y. A. Jee ◽  
B. L. Fisher ◽  
U. Balachandran
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Electrical Power ◽  
Electron Beam Evaporation ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Metallic Substrates ◽  
Ybco Thin Films ◽  
Structural And Electrical Properties ◽  
Optimized Conditions

ABSTRACTOxide high-Tc superconducting wires and tapes with high critical current density (Jc) are essential to future electrical power applications. Recently, YBa2Cu3O7−x (YBCO) thin films grown on Ni-based alloy tapes have attracted intense interest because of their promise for these applications. To achieve high Jc, buffer layers are necessary for fabricating biaxially aligned YBCO thin films. In our studies, yttria-stabilized zirconia (YSZ) layers were deposited on Ni- based alloy substrates by ion-beam assisted deposition, and CeO2 buffer layers were subsequently deposited on the YSZ layer by pulsed laser deposition (PLD) or electron beam evaporation. In addition, MgO layers were deposited on Ni-based alloy substrates by inclined substrate deposition. Finally, biaxially textured YBCO thin films were deposited on these buffered metallic substrates by PLD under optimized conditions. The orientation and in-plane textures of YBCO and the buffer layers were characterized by X-ray diffraction Ø/2Øscans, ø- scans, and pole figure analysis. The superconductive transition features were examined by measuring inductive Tc and transport Jc.

The preparation of YBCO thin films by a four ion beam co-deposition system

1989 ◽  
Vol 151 ◽  
pp. 419-427 ◽  
Author(s):  
S Michel ◽  
J.H James ◽  
B Dwir ◽  
M Affronte ◽  
B Kellett ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ybco Thin Films

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Sign in / Sign up

Export Citation Format

Share Document