Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

K. Remashan; K.N. Bhat

doi:10.1109/16.987102

Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

IEEE Transactions on Electron Devices ◽

10.1109/16.987102 ◽

2002 ◽

Vol 49 (3) ◽

pp. 343-353 ◽

Cited By ~ 20

Author(s):

K. Remashan ◽

K.N. Bhat

Keyword(s):

Gallium Arsenide ◽

Silicon Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Mis Capacitors

Download Full-text

Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors

Vacuum ◽

10.1016/j.vacuum.2004.01.023 ◽

2004 ◽

Vol 74 (3-4) ◽

pp. 525-529 ◽

Cited By ~ 19

Author(s):

Atsushi Masuda ◽

Masahiro Totsuka ◽

Tomoki Oku ◽

Ryo Hattori ◽

Hideki Matsumura

Keyword(s):

Gallium Arsenide ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films

Download Full-text

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Cited By ~ 3

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

Download Full-text

Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐doped HfO 2 Gate Insulator Deposited with H 2 O Oxygen Precursor during ALD Process

physica status solidi (a) ◽

10.1002/pssa.202100006 ◽

2021 ◽

Author(s):

Jin-Ju Kim ◽

So-Jung Yoon ◽

Yeriaron Kim ◽

Seong-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator

Download Full-text

Gallium arsenide traveling-wave field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.21910 ◽

1985 ◽

Vol 32 (1) ◽

pp. 61-66 ◽

Cited By ~ 37

Author(s):

A.J. Holden ◽

D.R. Daniel ◽

I. Davies ◽

C.H. Oxley ◽

H.D. Rees

Keyword(s):

Gallium Arsenide ◽

Wave Field ◽

Traveling Wave ◽

Field Effect ◽

Field Effect Transistors

Download Full-text

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors

Nano Letters ◽

10.1021/acs.nanolett.8b01519 ◽

2018 ◽

Vol 18 (7) ◽

pp. 4431-4439 ◽

Cited By ~ 6

Author(s):

J. G. Gluschke ◽

J. Seidl ◽

R. W. Lyttleton ◽

D. J. Carrad ◽

J. W. Cochrane ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator

Download Full-text

Scaling of top-gate/bottom-contact pentacene-based organic field-effect transistors with amorphous rubrene gate insulator

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/aaf87a ◽

2019 ◽

Vol 58 (SB) ◽

pp. SBBG01

Author(s):

Shun-ichiro Ohmi ◽

Mizuha Hiroki ◽

Kyung Eun Park ◽

Yasutaka Maeda

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors ◽

Bottom Contact

Download Full-text

Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Solid-State Electronics ◽

10.1016/0038-1101(69)90119-1 ◽

1969 ◽

Vol 12 (2) ◽

pp. 111-116 ◽

Cited By ~ 10

Author(s):

H. Statz ◽

W.v. Münch

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

Download Full-text

Spontaneous oscillations in gallium arsenide field effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(80)90153-7 ◽

1980 ◽

Vol 23 (2) ◽

pp. 157-172 ◽

Cited By ~ 14

Author(s):

H.L. Grubin ◽

D.K. Ferry ◽

K.R. Gleason

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors ◽

Spontaneous Oscillations

Download Full-text

Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170018 ◽

2002 ◽

Author(s):

C.A. Bozada ◽

R.W. Dettmer ◽

C.L. Eppers ◽

K. Nakano ◽

C.E. Stutz ◽

...

Keyword(s):

Gallium Arsenide ◽

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Temperature Gaas

Download Full-text

Organic Field-Effect Transistors with High-.KAPPA. HfO2/Resin Double Gate Insulator

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.21.189 ◽

2008 ◽

Vol 21 (2) ◽

pp. 189-192 ◽

Cited By ~ 4

Author(s):

Gou Masaki ◽

Shigeki Naka ◽

Hiroyuki Okada

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Double Gate ◽

Organic Field Effect Transistors

Download Full-text