Design and performance of a vertical cavity surface emitting laser based on III-V quaternary semiconductor alloys for operation at 1.55 μm

2001 ◽  
Vol 48 (10) ◽  
pp. 2228-2237 ◽  
Author(s):  
M. Linnik ◽  
A. Christou
Keyword(s):  
Cavity Surface ◽  
Semiconductor Alloys ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
And Performance ◽  
Vertical Cavity

The Vertical-Cavity Surface-Emitting Laser

2010 ◽  
pp. 184-211
Author(s):  
Angélique Rissons ◽  
Jean-Claude Mollier
Keyword(s):  
Light Emitting Diode ◽  
Access Network ◽  
Cavity Surface ◽  
Network Architectures ◽  
Optical Access ◽  
Light Emitting ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
And Performance ◽  
Vertical Cavity

The proposal chapter aims at highlighting the tremendous emergence of the Vertical-Cavity Surface- Emitting Laser (VCSEL) in the FTTX systems. The VCSEL is probably one of the most important and promising components of the “last-leg” Optical Access Networks. To satisfy the bandwidth rise as well as the inexpensive design constraints, the VCSEL has found its place between the Light-Emitting-Diode (LED) and the Edge-Emitting-Laser (EEL) such as the DFB (Distributed-Feedback) laser. Hence, the authors dedicate a chapter to the promising VCSEL technology that aims to give an overview of the advances, the physical behavior, and the various structures regarding VCSELs. They discuss the VCSEL features and performance to weigh up the specific advantages and the weaknesses of the existing technology. Finally, diverse potentials of Optical Access Network architectures are discussed.

EPITAXIAL DESIGN AND PERFORMANCE OF AlGaInP RED (650–690 nm) VCSELs

1994 ◽  
Vol 05 (04) ◽  
pp. 625-666 ◽  
Author(s):  
R.P. SCHNEIDER ◽  
J.A. LOTT ◽  
M. HAGEROTT CRAWFORD ◽  
K.D. CHOQUETTE
Keyword(s):  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Device Structure ◽  
Near Ir ◽  
Vertical Cavity Surface ◽  
Key Issues ◽  
Surface Emitting Laser ◽  
And Performance ◽  
Vertical Cavity

Progress in addressing critical epitaxial design issues associated with AlGaInP -based visible (red) vertical-cavity surface-emitting laser (VCSEL) diodes is reviewed, with emphasis on those issues that differentiate red VCSELs from conventional AlGaAs -based near-IR VCSELs. Key issues include epitaxial growth techniques for red VCSELs, the unique properties of AlGaInP alloys and heterostructures, design and growth of visible distributed Bragg reflectors, and integration of AlGaInP and AlGaAs hetero-structures into the hybrid VCSEL device structure. The performance characteristics of AlGaInP/AlGaAs red VCSEL diodes are overviewed in the context of the epitaxial design.

High-speed vertical-cavity surface-emitting laser (VCSEL) absorption spectroscopy of ammonia (NH3) near 1.54 μm

2003 ◽  
Vol 76 (5) ◽  
pp. 603-608 ◽  
Author(s):  
G. Totschnig ◽  
M. Lackner ◽  
R. Shau ◽  
M. Ortsiefer ◽  
J. Rosskopf ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
High Speed ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
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