A large-signal SOI MOSFET model including dynamic self-heating based on small-signal model parameters

1999 ◽  
Vol 46 (4) ◽  
pp. 762-768 ◽  
Author(s):  
A.L. Caviglia ◽  
A.A. Iliadis
Keyword(s):  
Model Parameters ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Soi Mosfet ◽  
Self Heating ◽  
Small Signal Model

scholarly journals Unusual Response of Thin LiTaO3 Films to Intense Microwave Pulses

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3588
Author(s):  
Haojia Chen ◽  
Qiong Gao ◽  
Baoliang Qian ◽  
Lishan Zhao
Keyword(s):  
Nonlinear Behaviour ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Wide Range ◽  
Microwave Pulses ◽  
Intense Fields ◽  
Voltage Signal ◽  
Wave Sensors

Fundamentally different responses of a LiTaO 3 thin film detector are observed when it is subjected to short microwave pulses as the pulse intensity is altered over a wide range. We start from weak microwave pulses which lead to only trivial pyroelectric peak response. However, when the microwave pulses become intense, the normally expected pyroelectric signal seems to be suppressed and the sign of the voltage signal can even be completely changed. Analysis indicates that while the traditional pyroelectric model, which is a linear model and works fine for our data in the small regime, it does not work anymore in the large signal regime. Since the small-signal model is the key foundation of electromagnetic-wave sensors based on pyroelectric effects, such as pyroelectric infrared detecters, the observation in this work suggests that one should be cautious when using these devices in intense fields. In addition, the evolution of detector signal with respect to excitation strength suggests that the main polarisation process is changed in the large signal regime. This is of fundamental importance to the understanding on how crystalline solids interact with intense microwaves. Possible causes of the nonlinear behaviour is discussed.

A novel approach to extracting small-signal model parameters of silicon MOSFET's

1997 ◽  
Vol 7 (3) ◽  
pp. 75-77 ◽  
Author(s):  
S. Lee ◽  
H.K. Yu ◽  
C.S. Kim ◽  
J.G. Koo ◽  
K.S. Nam
Keyword(s):  
Model Parameters ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Novel Approach

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

2016 ◽  
Vol 25 (4) ◽  
pp. 048501 ◽  
Author(s):  
Ya-Bin Sun ◽  
Jun Fu ◽  
Yu-Dong Wang ◽  
Wei Zhou ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Model Parameters ◽  
Small Signal ◽  
Signal Model ◽  
Sige Hbt ◽  
Small Signal Model ◽  
Temperature Dependences

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 243-251 ◽  
Author(s):  
Tom K. Johansen ◽  
Matthias Rudolph ◽  
Thomas Jensen ◽  
Tomas Kraemer ◽  
Nils Weimann ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Parameter Extraction ◽  
Small Signal ◽  
Current Crowding ◽  
Signal Modeling ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Starting Point ◽  
Equivalent Circuit Parameters

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

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