Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure

1988 ◽  
Vol 35 (11) ◽  
pp. 1986-1989 ◽  
Author(s):  
T. Unagami ◽  
O. Kogure
Keyword(s):  
Leakage Current ◽  
Current Ratio ◽  
Low Leakage ◽  
Low Leakage Current

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs

1997 ◽  
Vol 471 ◽  
Author(s):  
Byung-Hyuk Min ◽  
Jerzy Kanicki
Keyword(s):  
Leakage Current ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Current Ratio ◽  
Low Leakage ◽  
Kink Effect ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Output Characteristics

ABSTRACTA new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

2015 ◽  
Vol 414 ◽  
pp. 237-242 ◽  
Author(s):  
Jun Ma ◽  
Xing Lu ◽  
Xueliang Zhu ◽  
Tongde Huang ◽  
Huaxing Jiang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Ratio ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Movpe Growth

300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

2014 ◽  
Vol 50 (4) ◽  
pp. 315-316 ◽  
Author(s):  
Zhe Xu ◽  
Jinyan Wang ◽  
Yong Cai ◽  
Jingqian Liu ◽  
Zhen Yang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Ratio ◽  
Low Leakage ◽  
Low Leakage Current

AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio

2010 ◽  
Vol 31 (2) ◽  
pp. 102-104 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Yi-Wei Lain ◽  
S.S.H. Hsu
Keyword(s):  
Leakage Current ◽  
Current Ratio ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current
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