The asymptotes of the base current in bipolar devices

1988 ◽  
Vol 35 (11) ◽  
pp. 1902-1908 ◽  
Author(s):  
L.M. Castaner ◽  
P. Ashburn ◽  
L. Prat Vinas ◽  
G.R. Wolstenholme
Keyword(s):  
2004 ◽  
Vol 51 (6) ◽  
pp. 3178-3185 ◽  
Author(s):  
X.J. Chen ◽  
H.J. Barnaby ◽  
R.L. Pease ◽  
R.D. Schrimpf ◽  
D.G. Platteter ◽  
...  

Author(s):  
Hide Murayama ◽  
Makoto Yamazaki ◽  
Shigeru Nakajima

Abstract Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.


2004 ◽  
Vol 51 (6) ◽  
pp. 3172-3177 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
J.R. Schwank ◽  
D.M. Fleetwood ◽  
R.L. Pease ◽  
J.A. Felix ◽  
...  

2004 ◽  
Vol 35 (3) ◽  
pp. 235-248 ◽  
Author(s):  
E.M. Sankara Narayanan ◽  
O. Spulber ◽  
M. Sweet ◽  
J.V.S.C. Bose ◽  
K. Verchinine ◽  
...  

1998 ◽  
Vol 45 (9) ◽  
pp. 2037-2046 ◽  
Author(s):  
N. Speciale ◽  
A. Leone ◽  
V. Graziano ◽  
G. Privitera

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