A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFETs

1998 ◽  
Vol 45 (10) ◽  
pp. 2146-2152 ◽  
Author(s):  
Shing-Hwa Renn ◽  
C. Raynaud ◽  
J.-L. Pelloie ◽  
F. Balestra
Keyword(s):  
Deep Submicron ◽  
Carrier Injection ◽  
Fully Depleted ◽  
Hot Carrier ◽  
Hot Carrier Injection

scholarly journals Impact of process variations and long term degradation on 6T-SRAM cells

2007 ◽  
Vol 5 ◽  
pp. 321-325 ◽  
Author(s):  
Th. Fischer ◽  
A. Olbrich ◽  
G. Georgakos ◽  
B. Lemaitre ◽  
D. Schmitt-Landsiedel
Keyword(s):  
Supply Voltage ◽  
Process Variations ◽  
Deep Submicron ◽  
Carrier Injection ◽  
Negative Bias Temperature Instability ◽  
Electrical Fields ◽  
Hot Carrier ◽  
Bias Temperature Instability ◽  
Hot Carrier Injection

Abstract. In modern deep-submicron CMOS technologies voltage scaling can not keep up with the scaling of the dimensions of transistors. Therefore the electrical fields inside the transistors are not constant anymore, while scaling down the device area. The rising electrical fields bring up reliability problems, such as hot carrier injection. Also other long term degradation mechanisms like Negative Bias Temperature Instability (NBTI) come into the focus of circuit design. Along with process device parameter variations (threshold voltage, mobility), variations due to the degradation of devices form a big challenge for designers to build circuits that both yield high under the influence of process variations and remain functional with respect to long term device drift. In this work we present the influence of long term degradation and process variations on the performance of SRAM core-cells and parametric yield of SRAM arrays. For different use cases we show the performance degradation depending on temperature and supply voltage.

Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid

1999 ◽  
Vol 75 (26) ◽  
pp. 4192-4194
Author(s):  
Cher-Liang Cha ◽  
Kheng-Chok Tee ◽  
Eng-Fong Chor ◽  
Hao Gong ◽  
Krishnamachar Prasad ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Deep Submicron ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection
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