Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devices

1991 ◽  
Vol 38 (2) ◽  
pp. 246-254 ◽  
Author(s):  
C.-Y. Lu ◽  
J.J. Sung ◽  
R. Liu ◽  
N.-S. Tsai ◽  
R. Sing ◽  
...  
Keyword(s):  
Device Design ◽  
Junction Formation ◽  
Design Tradeoffs

Gallium Nitride Power Device Design Tradeoffs

2002 ◽  
Vol 389-393 ◽  
pp. 1531-1534 ◽  
Author(s):  
Kevin Matocha ◽  
T. Paul Chow ◽  
Ronald J. Gutmann
Keyword(s):  
Gallium Nitride ◽  
Power Device ◽  
Device Design ◽  
Design Tradeoffs

Device design tradeoffs for 55v ldmos driver embedded in 0.18 micron platform

2008 ◽  
Author(s):  
Nathanaelle Klein ◽  
Sharon Levin ◽  
Gal Fleishon ◽  
Sagy Levy ◽  
Alon Eyal ◽  
...  
Keyword(s):  
Device Design ◽  
Design Tradeoffs

A new approach to photovoltaic junction formation by using pulse implantation doping technique

1982 ◽  
Vol 43 (9) ◽  
pp. 1353-1358 ◽  
Author(s):  
J. Piekoszewski ◽  
M. Gryziński ◽  
J. Langner ◽  
Z. Werner ◽  
G.C. Huth
Keyword(s):  
New Approach ◽  
Junction Formation ◽  
Doping Technique
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