Design of a low-voltage, axially modulated, cusp-injected, third harmonic, X-band gyrotron amplifier experiment

1997 ◽  
Vol 44 (11) ◽  
pp. 2022-2028
Author(s):  
A. Liu ◽  
W. Lawson ◽  
A. Fernandez ◽  
J. Rodgers ◽  
W.W. Destler
1996 ◽  
Vol 24 (3) ◽  
pp. 678-686 ◽  
Author(s):  
W. Lawson ◽  
A. Grigoropoulos ◽  
A. Liu ◽  
G.P. Saraph ◽  
J. Rodgers ◽  
...  

1996 ◽  
Vol 43 (6) ◽  
pp. 1021-1028 ◽  
Author(s):  
W. Lawson ◽  
W.W. Destler ◽  
A. Fernandez ◽  
A. Liu ◽  
J. Rodgers ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 69 ◽  
Author(s):  
Taufiq Alif Kurniawan ◽  
Toshihiko Yoshimasu

This paper presents a 2.5-GHz low-voltage, high-efficiency CMOS power amplifier (PA) IC in 0.18-µm CMOS technology. The combination of a dual-switching transistor (DST) and a third harmonic tuning technique is proposed. The DST effectively improves the gain at the saturation power region when the additional gain extension of the secondary switching transistor compensates for the gain compression of the primary one. To achieve high-efficiency performance, the third harmonic tuning circuit is connected in parallel to the output load. Therefore, the flattened drain current and voltage waveforms are generated, which in turn reduce the overlapping and the dc power consumption significantly. In addition, a 0.5-V back-gate voltage is applied to the primary switching transistor to realize the low-voltage operation. At 1 V of supply voltage, the proposed PA has achieved a power added efficiency (PAE) of 34.5% and a saturated output power of 10.1 dBm.


1996 ◽  
Vol 24 (3) ◽  
pp. 613-619 ◽  
Author(s):  
D.B. McDermott ◽  
A.J. Balkcum ◽  
N.C. Luhmann

2003 ◽  
Vol 31 (2) ◽  
pp. 264-271 ◽  
Author(s):  
Hongfu Li ◽  
Zhong-Lian Xie ◽  
Wenxiang Wang ◽  
Yong Luo ◽  
Pinzhong Du ◽  
...  

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