Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface

1990 ◽  
Vol 37 (4) ◽  
pp. 1093-1098 ◽  
Author(s):  
K. Horio ◽  
H. Yanai
Keyword(s):  
Numerical Modeling ◽  
Thermionic Emission ◽  
Emission Mechanism

scholarly journals A Study of a-Sic/C-Si(n) Isotype Heterojunctions

1993 ◽  
Vol 16 (1) ◽  
pp. 55-64 ◽  
Author(s):  
N. Georgoulas ◽  
L. Magafas ◽  
A. Thanailakis
Keyword(s):  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Diffusion Mechanism ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Emission Mechanism ◽  
Drift Diffusion ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage

In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X1= 4.20 ± 0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared

A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters

2020 ◽  
Vol 135 (11) ◽  
Author(s):  
Hicham Helal ◽  
Zineb Benamara ◽  
Benito González Pérez ◽  
Arslane Hatem Kacha ◽  
Abdelaziz Rabehi ◽  
...  
Keyword(s):  
Thermionic Emission ◽  
Schottky Contacts ◽  
Emission Mechanism ◽  
Electrical Parameters ◽  
New Model

Characteristics of deep traps in freestanding GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
Z-Q. Fang ◽  
D.C. Look ◽  
P. Visconti ◽  
C. Lu ◽  
D. Wang ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermionic Emission ◽  
Surface Damage ◽  
Emission Mechanism ◽  
Deep Traps ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Dlts Spectra

AbstractDeep traps in a 300-m m-thick freestanding GaN sample were characterized by deep level transient spectroscopy (DLTS), using Schottky barrier diodes (SBDs) fabricated on the Ga polarity surface. Most of the SBDs show nearly ideal current-voltage characteristics, with both forward and reverse currents controlled by the thermionic emission mechanism. Five common traps, which include A1 (1.0 eV), A (0.66 eV), B (0.59 eV), C (0.35 eV), and D (0.25 eV), can be consistently observed in all SBDs. Two of them, A1 and C, are related to surface damage. Surprisingly, some new traps can be found in the DLTS spectra of some SBDs if higher reverse biases are used in the measurements. However, they cannot be fitted by DLTS simulations, and are likely associated with parasitic capacitance somewhere in the cryostat.

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