Ensemble Monte Carlo study of interface-state generation in low-voltage scaled silicon MOS devices

1996 ◽  
Vol 43 (7) ◽  
pp. 1123-1132 ◽  
Author(s):  
J.J. Ellis-Monaghan ◽  
R.B. Hulfachor ◽  
K.W. Kim ◽  
M.A. Littlejohn
Keyword(s):  
Monte Carlo ◽  
Low Voltage ◽  
Monte Carlo Study ◽  
Interface State ◽  
Ensemble Monte Carlo ◽  
Mos Devices ◽  
State Generation

Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices

1985 ◽  
Vol 28 (8) ◽  
pp. 733-740 ◽  
Author(s):  
Chu-Hao ◽  
J. Zimmermann ◽  
M. Charef ◽  
R. Fauquembergue ◽  
E. Constant
Keyword(s):  
Monte Carlo ◽  
Gas Transport ◽  
Electron Gas ◽  
Monte Carlo Study ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Mos Devices ◽  
Dimensional Electron Gas

A grand ensemble Monte Carlo study of metal adsorption on a (110) bcc substrate

1992 ◽  
Vol 264 (3) ◽  
pp. 455-466 ◽  
Author(s):  
N. Georgiev ◽  
A. Milchev ◽  
M. Paunov ◽  
B. Dünweg
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Metal Adsorption ◽  
Ensemble Monte Carlo

Grand ensemble Monte Carlo study of crystallization in sub-monolayer adsorption at a solid vapour interface

1978 ◽  
Vol 31 (5) ◽  
pp. 933 ◽  
Author(s):  
JE Lane ◽  
TH Spurling
Keyword(s):  
Monte Carlo ◽  
Adsorption Isotherm ◽  
Thermodynamic Properties ◽  
Boundary Conditions ◽  
Iterative Procedure ◽  
Periodic Boundary ◽  
Monte Carlo Study ◽  
Periodic Boundary Conditions ◽  
Ensemble Monte Carlo ◽  
Monolayer Adsorption

A grand ensemble Monte Carlo procedure is used to examine the thermodynamic properties of a crystal-like layer of krypton adsorbed at sub-monolayer coverages on graphite at 90.12 K. The effect of the periodic boundary conditions on these properties is discussed and used to develop a thermodynamically consistent iterative procedure to estimate the transition pressure and thereby fix the adsorption isotherm.

Effect of Growth Conditions on the Reliability of Ultrathin MOS Gate Oxides

1996 ◽  
Vol 428 ◽  
Author(s):  
Tien-Chun Yang ◽  
Krishna C. Saraswat
Keyword(s):  
Gate Oxide ◽  
Interface State ◽  
Growth Conditions ◽  
Physical Stress ◽  
Constant Current ◽  
Strong Function ◽  
Oxidation Rates ◽  
Mos Devices ◽  
State Generation ◽  
Mos Gate

AbstractIn this work we demonstrate that in MOS devices the reliability of ultrathin (< 100Å) gate oxide is a strong function of growth conditions, such as, temperature and the growth rate. In addition, for constant current gate injection the degradation of SiO2 is enhanced as the thickness is reduced. We attribute this to physical stress in SiO2 resulting from the growth process. The degradation is always more for those growth conditions which result in higher physical stress in SiO2. Higher temperatures and slower oxidation rates allow stress relaxation through viscous flow and hence result in SiO2 of better reliability. We also found that for constant current stressing, the interface damage is more at the collecting electrode than at the injecting electrode. ΔDit (stress induced interface state generation) can be reduced after a high temperature Ar post anneal after the gate oxide growth.

A grand ensemble Monte Carlo study of krypton adsorbed on graphite

1983 ◽  
Vol 49 (4) ◽  
pp. 829-847 ◽  
Author(s):  
J.S. Whitehouse ◽  
D. Nicholson ◽  
N.G. Parsonage
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Ensemble Monte Carlo
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