A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films

1996 ◽  
Vol 43 (4) ◽  
pp. 561-567 ◽  
Author(s):  
Min Cao ◽  
S. Talwar ◽  
K.J. Kramer ◽  
T.W. Sigmon ◽  
K.C. Saraswat
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Thin Film Transistor ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Xecl Excimer Laser

High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization

2018 ◽  
Vol 39 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Chan-Yu Liao ◽  
Shih-Hung Chen ◽  
Wen-Hsien Huang ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Recessed Channel

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

Location Control of Crystal Grains in Excimer Laser Crystallization of Silicon Thin Films for Single-Grain TFTs

2004 ◽  
Vol 808 ◽  
Author(s):  
Hideya Kumomi ◽  
Hiroaki Wakiyama ◽  
Gou Nakagawa ◽  
Kenji Makihira ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Excimer Laser ◽  
High Performance ◽  
Seed Crystal ◽  
Molten Silicon ◽  
Laser Crystallization ◽  
Single Grain ◽  
Excimer Laser Crystallization ◽  
Crystal Grains

ABSTRACTLocation of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.

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