The influence of thermal gradients on the characterization of Schottky-barrier diodes

1990 ◽  
Vol 37 (1) ◽  
pp. 301-303 ◽  
Author(s):  
V.W.L. Chin ◽  
S.M. Newbery
Keyword(s):  
Schottky Barrier ◽  
Thermal Gradients ◽  
Schottky Barrier Diodes

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Characterization of aluminum/LPCVD polysilicon Schottky barrier diodes

1987 ◽  
Vol 30 (3) ◽  
pp. 339-343
Author(s):  
Dao-Long Chen ◽  
David W. Greve ◽  
Alberto M. Guzman
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes

Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum ◽  
2000 ◽  
Vol 57 (2) ◽  
pp. 219-228 ◽  
Author(s):  
B. Akkal ◽  
Z. Benamara ◽  
B. Gruzza ◽  
L. Bideux
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Schottky Barrier Diodes

Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes

2016 ◽  
Vol 3 (5) ◽  
pp. 1255-1261 ◽  
Author(s):  
M. Yıldırım ◽  
N. Tuğluoğlu ◽  
Ö.F. Yüksel ◽  
A. Erdoğan ◽  
M. Kuş
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Schottky Barrier Diodes

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

2020 ◽  
Vol 29 (4) ◽  
pp. 047305
Author(s):  
Wei-Fan Wang ◽  
Jian-Feng Wang ◽  
Yu-Min Zhang ◽  
Teng-Kun Li ◽  
Rui Xiong ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Fabrication And Characterization

Thermal characterization of gallium oxide Schottky barrier diodes

2018 ◽  
Vol 89 (11) ◽  
pp. 114903 ◽  
Author(s):  
Bikramjit Chatterjee ◽  
Asanka Jayawardena ◽  
Eric Heller ◽  
David W. Snyder ◽  
Sarit Dhar ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Thermal Characterization ◽  
Schottky Barrier Diodes

scholarly journals Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

2013 ◽  
Vol 103 (19) ◽  
pp. 193106 ◽  
Author(s):  
Chanyoung Yim ◽  
Niall McEvoy ◽  
Georg S. Duesberg
Keyword(s):  
Impedance Spectroscopy ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes
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