Electron and hole charge separation with a dual channel transistor

1989 ◽  
Vol 36 (11) ◽  
pp. 2604 ◽  
Author(s):  
A. Roy ◽  
M.H. White
Keyword(s):  
Charge Separation ◽  
Dual Channel ◽  
Hole Charge

Enhanced photocatalytic performance at a Au/N–TiO2hollow nanowire array by a combination of light scattering and reduced recombination

2014 ◽  
Vol 16 (33) ◽  
pp. 17748-17755 ◽  
Author(s):  
P. Sudhagar ◽  
Anitha Devadoss ◽  
Taeseup Song ◽  
P. Lakshmipathiraj ◽  
Hyungkyu Han ◽  
...  
Keyword(s):  
Light Scattering ◽  
Visible Light ◽  
Charge Separation ◽  
Nitrogen Doping ◽  
Photocatalytic Performance ◽  
Nanowire Array ◽  
Au Nanoparticle ◽  
Electron Hole ◽  
Hole Charge

Maximizing the Au nanoparticle decoration on TiO2nanowire through nitrogen doping for simultaneous enhancement in visible light scattering and electron–hole charge separation.

Intramolecular Polarization Induces Electron–Hole Charge Separation in Light-Harvesting Molecular Triads

2013 ◽  
Vol 118 (1) ◽  
pp. 126-134 ◽  
Author(s):  
Luis G. C. Rego ◽  
Bruno C. Hames ◽  
Kahio T. Mazon ◽  
Jan-Ole Joswig
Keyword(s):  
Charge Separation ◽  
Light Harvesting ◽  
Electron Hole ◽  
Hole Charge

Photoinduced electron-hole charge separation, intrinsic self-doping and novel device applications of Q1D heterojunction materials: mixed-halide MX solids

1993 ◽  
Vol 54 (1-3) ◽  
pp. 385-390 ◽  
Author(s):  
A. Saxena ◽  
X.Z. Huang ◽  
A.R. Bishop ◽  
L.A. Worl ◽  
S.P. Love ◽  
...  
Keyword(s):  
Charge Separation ◽  
Electron Hole ◽  
Novel Device ◽  
Hole Charge ◽  
Device Applications

scholarly journals Carrier dynamics in highly excited TlInS2: evidence of 2D electron–hole charge separation at parallel layers

2019 ◽  
Vol 21 (4) ◽  
pp. 2102-2114
Author(s):  
Vytautas Grivickas ◽  
Patrik Ščajev ◽  
Vitalijus Bikbajevas ◽  
Olga V. Korolik ◽  
Alexander V. Mazanik
Keyword(s):  
Charge Separation ◽  
Carrier Dynamics ◽  
Crystal Phase ◽  
Transient Grating ◽  
Electron Hole ◽  
Hole Charge

Imprinted transient grating fringes in TlInS2 are attributed to new crystal phase formed by 2D electron–hole charge separation on local layers.

Physical stage of photosynthesis charge separation

2016 ◽  
Vol 186 (6) ◽  
pp. 597-625 ◽  
Author(s):  
Andrei G. Yakovlev ◽  
Vladimir A. Shuvalov
Keyword(s):  
Charge Separation

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

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