Optical characterization of diamond MIS capacitors

1994 ◽  
Vol 41 (7) ◽  
pp. 1265-1272 ◽  
Author(s):  
M. Marchywka ◽  
D. Moses
1989 ◽  
Vol 160 ◽  
Author(s):  
Phillip E. Thompson ◽  
James Waterman ◽  
D. Kurtgaskill ◽  
Robert Stahlbush ◽  
Daniel Gammon ◽  
...  

AbstractInSb has been grown on semi-insulating GaAs substrates by molecular beam epitaxy. By growing an InSb buffer layer at 300 C prior to the main InSb layer growth at 420 C, the effect of the 14% lattice mismatch between GaAs and InSb was minimized. A typical 5 µrn InSb film had a room temperature carrier concentration and electron Hall mobility of 2 × 1016/cm3 and 6×104 cm2/Vs, respectively. At 77 K these values became 2 × 1015/cm3 and 1.1 ×105 cm2/Vs. Temperature dependent Hall measurements revealed a peak in the mobility at 85 K and 70 K for the 5 and 10 µm samples. Capacitance-voltage measurements using MIS capacitors produced 77 K carrier concentrations in agreement with the low fieldHall measurements. Carrier lifetimes were determined by photoconductive response measurements. Lifetimes of 20 ns and 50 ns were determined for the 5 and 10 µm films. For comparison, the carrier lifetime in bulk n-type InSb was found to be 200 ns. Optical characterization by room temperature IR transmission spectroscopy showed a broad absorption edge, with an absorption coefficient of 1.4 × 103/cm at a wavelength of 6 µm. Epilayer thickness was determined from observed interference fringes. Raman spectroscopy showed that each epitaxial layer had a spectrum equivalent to that of bulk InSb.


2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  

2021 ◽  
Vol 258 ◽  
pp. 123994
Author(s):  
Luciana M. Schabbach ◽  
Bruno C. dos Santos ◽  
Letícia S. De Bortoli ◽  
Márcio Celso Fredel ◽  
Bruno Henriques

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  

2014 ◽  
Author(s):  
P. Petrik ◽  
N. Kumar ◽  
E. Agocs ◽  
B. Fodor ◽  
S. F. Pereira ◽  
...  

2021 ◽  
Vol 717 (1) ◽  
pp. 92-97
Author(s):  
O. S. Kondratenko ◽  
S. V. Mamykin ◽  
T. S. Lunko ◽  
I. B. Mamontova ◽  
V. R. Romanyuk

2019 ◽  
Vol 943 ◽  
pp. 95-99
Author(s):  
Li Jun Wang ◽  
Kazuo Umemura

Optical absorption spectroscopy provides evidence for individually dispersed carbon nanotubes. A common method to disperse SWCNTs into aqueous solution is to sonicate the mixture in the presence of a double-stranded DNA (dsDNA). In this paper, optical characterization of dsDNA-wrapped HiPco carbon nanotubes (dsDNA-SWCNT) was carried out using near infrared (NIR) spectroscopy and photoluminescence (PL) experiments. The findings suggest that SWCNT dispersion is very good in the environment of DNA existing. Additionally, its dispersion depends on dsDNA concentration.


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