The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

1994 ◽  
Vol 41 (2) ◽  
pp. 198-203 ◽  
Author(s):  
A. Gruhle
Keyword(s):  
Ideality Factor ◽  
Saturation Current ◽  
Switching Speed

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Extraction of the Parameters from I-V Data for Nonideal Photodetectors: A Comparative Study

2005 ◽  
Vol 494 ◽  
pp. 83-88
Author(s):  
A. Vasić ◽  
P. Osmokrović ◽  
B. Lončar ◽  
S. Stanković
Keyword(s):  
Comparative Study ◽  
Ideality Factor ◽  
Series Resistance ◽  
Semiconductor Devices ◽  
Saturation Current ◽  
Made In

Parameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Improvement of the Refractory Metal/n-GaAs Interface by Low Temperature Anneal

1996 ◽  
Vol 448 ◽  
Author(s):  
A. Singh ◽  
L. Velásquez
Keyword(s):  
Ideality Factor ◽  
Forward Bias ◽  
Rf Sputtering ◽  
Frequency Dispersion ◽  
Interface States ◽  
Frequency Variation ◽  
Saturation Current ◽  
Zero Bias ◽  
Heat Treated ◽  
Schottky Junctions

AbstractThe W/n-GaAs Schottky junctions A and B of area 1.75×l0-2 cm2 were fabricated by deposition of W on the chemically etched polished surfaces of n-GaAs samples by rf sputtering using a rf powers of 300 Watt for 30 min. The W contact B was subjected to a 90 min. thermal anneal at 390 °C. The room temperature I-V and C-V/f (with 200 Hz < f < 1 MHz) measurements were carried out for both the as-deposited and thermally annealed W/n-GaAs Schottky junctions A and B, respectively. From the direct I-V data, the values of 1.09 and 8.1×10-8 A for the ideality factor (n) and the reverse saturation current (Io), respectively, were estimated for the diode B, compared to the values of n=1.70 and Io=6.3×10-6 A for the diode A. The observed frequency dispersion in the zero bias capacitance in the diode B was attributed to fast interface states with a time constant, τ2=6 μs and density, Nss2=5.8×1010 eV-1cm-2, whereas, both the slow interface states (with τ1=4 ms and density, Nss1=7.8×1012 eV-1cm-2) and fast states (with τ2=1 μs and density Nss2=8.6×1010 eV-1cm-2) were responsible for the observed frequency variation of the zero bias capacitance in the diode A. For the forward bias values in the range 20-100 mV, the frequency dispersion in the measured capacitance suggested the presence of both the fast and slow interface states (with time constants differing by three orders of magnitude) in the as-deposited and the heat treated W/n-GaAs interfaces. Thermal anneal at 390 °C for 90 min. lowered the density of states at the W/n-GaAs interface by two orders of magnitude and resulted in the formation of a high quality rectifying W contact to n-GaAs with a rectification ratio of 1.4×104, a low Io and an ideality factor close to unity.

scholarly journals Extraction of Saturation Current and Ideality Factor from Measuring Voc and Isc of Photovoltaic Modules

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
E. L. Meyer
Keyword(s):  
Solar Cell ◽  
Ideality Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Outdoor Exposure ◽  
Open Circuit ◽  
Saturation Current ◽  
Easy Method ◽  
Two Parameters

Saturation current (I0) and ideality factor (n) of a p-n junction solar cell are an indication of the quality of the cell. These two parameters are usually estimated from dark current-voltage measurements. In this study, a quick and easy method to determine these two parameters by measuring open-circuit, Voc, and short-circuit current, Isc, is presented. Solar cell designers can use this method as a grading or diagnostic tool to evaluate degradation in photovoltaic (PV) modules. In order to verify the Voc-Isc method, a series of experiments have been conducted on a single cell and a 36-cell module. Good agreement between our Voc-Isc method and dark I-V measurements was obtained. An application of the method on the performance degradation of a single-junction a-Si:H module revealed that the module’s I0 increased by more than three orders of magnitude and n increased by 65% after an outdoor exposure of 130 kWh/m2. This increase in n indicates that after exposure, the recombination current in the cells’ space charge region increased due to the light-induced formation of metastable defects. The method is also used to assess the quality of five PV module technologies and proved to be reliable despite defective cells in a module.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

Ion Beam Mixing of Sb Schottky Contacts on n-Si

1989 ◽  
Vol 157 ◽  
Author(s):  
J. B. Malherbe ◽  
K. P. Weimer ◽  
L. J. Bredell ◽  
E. Friedland ◽  
G. Myburg
Keyword(s):  
Ideality Factor ◽  
Series Resistance ◽  
Ion Beam ◽  
Dose Dependence ◽  
Schottky Contacts ◽  
Interface Conditions ◽  
Saturation Current ◽  
Ion Beam Mixing

ABSTRACTThe I—V characteristics of as—deposited antimony Schottky contacts on silicon were extremely sensitive to interface conditions. This led to unpredictable results for the unimplanted contacts. After Si* implantation the contacts displayed more uniform I—V characteristics. Implantation led to higher values for the ideality constant, the series resistance and for the saturation current. The ideality factor seems to decrease at the higher implantation doses (ϕ ≥ 5×1014 Sb+cn−2), while no clear dose dependence patterns were observed for the saturation current and series resistance after implantation.

Diode Parameters of Heterojunctions Comprising p-Type Si Substrate and n-Type β-FeSi2 Thin Films

2014 ◽  
Vol 1043 ◽  
pp. 57-61
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Mahmoud Shaban ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Straight Line ◽  
Current Voltage ◽  
Saturation Current Density ◽  
P Type ◽  
Direct Current Sputtering

n-Type β-FeSi2/p-type Si heterojunctions have been successfully fabricated by facing-targets direct-current sputtering at a substrate temperature of 600 °C without post-annealing and their current-voltage characteristics were measured at low temperatures ragne from 300 K down to 50 K. The ideality factor, saturation current and series resistance were estimated by the thermionic emission theory and Cheung’s method. By the thermionic emission theory, we calculated the ideality factor from the slope of the linear part from the forward lnJ-V and estimated the saturation current density from the straight line intercept of lnJ-V at a zero voltage. As decreasing temperatures from 300 down to 50 K, the value of ideality factor increased from 1.2 to 15.6, while the value of saturation current density decreased from 1.6 × 10−6 A/cm2 to 3.8 × 10−10 A/cm2. From the plots of dV/d (lnJ)-J and H(J)-J by Cheung’s method, the obtained values of series resistances are consistent with each other. The series resistances analyzed from both plots increased as decreasing temperatures.

scholarly journals Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

2019 ◽  
Vol 8 (2) ◽  
pp. 428-437
Author(s):  
M. Azim Khairi ◽  
Rosminazuin Ab. Rahim ◽  
Norazlina Saidin ◽  
Yusof Abdullah ◽  
Nurul Fadzlin Hasbullah
Keyword(s):  
Silicon Carbide ◽  
Electron Irradiation ◽  
Ideality Factor ◽  
Reverse Bias ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Bias Current ◽  
Saturation Current ◽  
Order Of Magnitude

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

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