The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators

1988 ◽  
Vol 35 (4) ◽  
pp. 405-413 ◽  
Author(s):  
V.P. Kesan ◽  
D.P. Neikirk ◽  
P.A. Blakey ◽  
B.G. Streetman ◽  
T.D. Linton
Keyword(s):  
Quantum Well ◽  
Optimum Design ◽  
Transit Time ◽  
Oscillation Frequency ◽  
Time Effects ◽  
Maximum Oscillation Frequency

Transit-time effects in saturated absorption resonances

1986 ◽  
Vol 47 (12) ◽  
pp. 2025-2039 ◽  
Author(s):  
A. Titov ◽  
Yu. Malyshev ◽  
Yu. Rastorguev
Keyword(s):  
Transit Time ◽  
Time Effects ◽  
Saturated Absorption

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Quantum-well injection transit time device

1992 ◽  
Author(s):  
B. B. Pal ◽  
R. U. Khan
Keyword(s):  
Quantum Well ◽  
Transit Time
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