Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

1988 ◽  
Vol 35 (2) ◽  
pp. 139-144 ◽  
Author(s):  
L.D. Nguyen ◽  
W.J. Schaff ◽  
P.J. Tasker ◽  
A.N. Lepore ◽  
L.F. Palmateer ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Control ◽  
Effect Transistor ◽  
Rf Performance

Erratum: Heterostructure field effect transistor with doping dipole in charge control layer

1990 ◽  
Vol 26 (21) ◽  
pp. 1832
Author(s):  
J. Zou ◽  
A. Godinath ◽  
T. Akinwande ◽  
M.S. Shur
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Control ◽  
Effect Transistor ◽  
Control Layer

Heterostructure field effect transistor with doping dipole in charge control layer

1990 ◽  
Vol 26 (14) ◽  
pp. 964
Author(s):  
J. Zou ◽  
A. Gopinath ◽  
T. Akinwande ◽  
M.S. Shur
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Control ◽  
Effect Transistor ◽  
Control Layer

scholarly journals Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3121
Author(s):  
Monica La Mura ◽  
Patrizia Lamberti ◽  
Vincenzo Tucci
Keyword(s):  
High Frequency ◽  
Communication Systems ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Geometrical Parameters ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor

2013 ◽  
Vol 13 (2) ◽  
pp. 771-775 ◽  
Author(s):  
Ming Shi ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
Damien Querlioz ◽  
Philippe Dollfus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Experimental Assessment ◽  
Charge Control ◽  
Effect Transistor

RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit

2006 ◽  
Vol 45 (4B) ◽  
pp. 3609-3613 ◽  
Author(s):  
Haitao Ye ◽  
Makoto Kasu ◽  
Kenji Ueda ◽  
Yoshiharu Yamauchi ◽  
Narihiko Maeda ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Elevated Temperatures ◽  
Effect Transistor ◽  
Rf Performance
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