A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

M. Schroter; M. Friedrich; H.-M. Rein

doi:10.1109/16.239746

A generalized integral charge-control relation and its application to compact models for silicon-based HBT's

IEEE Transactions on Electron Devices ◽

10.1109/16.239746 ◽

1993 ◽

Vol 40 (11) ◽

pp. 2036-2046 ◽

Cited By ~ 33

Author(s):

M. Schroter ◽

M. Friedrich ◽

H.-M. Rein

Keyword(s):

Charge Control ◽

Compact Models ◽

Silicon Based ◽

Control Relation

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A Charge Control Relation for Bipolar Transistors

Bell System Technical Journal ◽

10.1002/j.1538-7305.1970.tb01759.x ◽

1970 ◽

Vol 49 (1) ◽

pp. 115-120 ◽

Cited By ~ 111

Author(s):

H. K. Gummel

Keyword(s):

Bipolar Transistors ◽

Charge Control ◽

A Charge ◽

Control Relation

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The general transient charge control relation: a new charge control relation for semiconductor devices

IEEE Transactions on Electron Devices ◽

10.1109/16.81640 ◽

1991 ◽

Vol 38 (6) ◽

pp. 1467-1476 ◽

Cited By ~ 33

Author(s):

J.S. Hamel ◽

C.R. Selvakumar

Keyword(s):

Semiconductor Devices ◽

Charge Control ◽

Control Relation

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The transient integral charge control relation—A novel formulation of the currents in a bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23050 ◽

1987 ◽

Vol 34 (5) ◽

pp. 1090-1099 ◽

Cited By ~ 52

Author(s):

H. Klose ◽

A.W. Wieder

Keyword(s):

Bipolar Transistor ◽

Charge Control ◽

Control Relation

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Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22076 ◽

1985 ◽

Vol 32 (6) ◽

pp. 1070-1076 ◽

Cited By ~ 24

Author(s):

H.-M. Rein ◽

H. Stubing ◽

M. Schroter

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

High Current ◽

Charge Control ◽

Current Densities ◽

Control Relation

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Extension of Gummel's charge control relation

Solid-State Electronics ◽

10.1016/0038-1101(77)90137-x ◽

1977 ◽

Vol 20 (5) ◽

pp. 441-442 ◽

Cited By ~ 1

Author(s):

J.M. Borrego ◽

V.A.K. Temple ◽

M.S. Adler

Keyword(s):

Charge Control ◽

Control Relation

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Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge-control relation

Physica B+C ◽

10.1016/0378-4363(85)90596-0 ◽

1985 ◽

Vol 129 (1-3) ◽

pp. 332-336 ◽

Cited By ~ 2

Author(s):

M. Schröter ◽

H.-M. Rein

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

Two Dimensional ◽

High Current ◽

Charge Control ◽

Dimensional Modeling ◽

Current Densities ◽

Control Relation

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Deposition of ternary silicon based compounds by CVD techniques

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999813 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-101-Pr8-107

Author(s):

F. J. Martí ◽

A. Castro ◽

J. Olivares ◽

C. Gómez-Aleixandre ◽

J. M. Albella

Keyword(s):

Silicon Based

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CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20013107 ◽

2001 ◽

Vol 11 (PR3) ◽

pp. Pr3-861-Pr3-867 ◽

Cited By ~ 3

Author(s):

S. M. Zemskova ◽

J. A. Haynes ◽

K. M. Cooley

Keyword(s):

Corrosion Protection ◽

Silicon Based

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Coupled Analysis of MEMS and Electric Circuits Using Compact Models and Macromodels

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.134.349 ◽

2014 ◽

Vol 134 (11) ◽

pp. 349-356

Author(s):

Shunsuke Mochizuki ◽

Chieki Mizuta

Keyword(s):

Coupled Analysis ◽

Electric Circuits ◽

Compact Models

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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