A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors

1989 ◽  
Vol 36 (1) ◽  
pp. 101-107 ◽  
Author(s):  
B. Faughnan ◽  
A.C. Ipri
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Hydrogen Passivation

Hydrogen Passivation of Polysilicon Thin-Film Transistors by Electron Cyclotron Resonance Plasma

1993 ◽  
Vol 32 (Part 1, No. 6A) ◽  
pp. 2601-2606 ◽  
Author(s):  
Kris Baert ◽  
Hiroyuki Murai ◽  
Kazuhiro Kobayashi ◽  
Hirofumi Namizaki ◽  
Masahiro Nunoshita
Keyword(s):  
Thin Film ◽  
Cyclotron Resonance ◽  
Thin Film Transistors ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Hydrogen Passivation ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors

2009 ◽  
Vol 21 (20) ◽  
pp. 4949-4954 ◽  
Author(s):  
R. T. Weitz ◽  
K. Amsharov ◽  
U. Zschieschang ◽  
M. Burghard ◽  
M. Jansen ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Time Dependent ◽  
Organic Thin Film ◽  
Mobility Degradation

Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors

1995 ◽  
Author(s):  
Kwon-Young Choi ◽  
Juhn-Suk Yoo ◽  
Hong-seok Choi ◽  
Min-Koo Han ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Hydrogen Passivation

Charge Transport in Pentacene Thin Film Transistors

2001 ◽  
Vol 665 ◽  
Author(s):  
J. H. Schön ◽  
L. D. Buchholz ◽  
Ch. Kloc ◽  
B. Batlogg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Nanocrystalline Material ◽  
Hole Mobility ◽  
Grain Sizes

ABSTRACTThe charge transport properties in polycrystalline pentacene thin film transistors is investigated. A potential barrier is formed at grain boundaries due charged trapping states. The influence of such grain boundaries on the hole mobility of the devices is analyzed for different grain sizes, trap concentrations, and carrier densities. The results reveal that room temperature mobilities exceeding 0.5 cm2/Vs can be obtained in thin films with large grains as well as in nanocrystalline material. Consequently, single crystal device limits can be reached also by polycrystalline pentacene thin film transistors.

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