Blue laser diodes and LEDs based on II-VI semiconductor heterostructures

1992 ◽  
Vol 39 (11) ◽  
pp. 2653 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
B. Sneed ◽  
K. Bowers ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Semiconductor Heterostructures

Blue Lasers Based on II-VI Semiconductor Heterostructures

1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Laser Emission ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Pulsed Laser ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Semiconductor Heterostructures ◽  
Turn On ◽  
Cw Operation

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

Blue Laser Diodes And Leds Based On II-VI Semiconductor Heterostructures

1992 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
B. Sneed ◽  
K. Bowers ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Semiconductor Heterostructures

Pulsed operation of (Al,Ga,In)N blue laser diodes

1998 ◽  
Author(s):  
Amber C. Abare ◽  
Michael P. Mack ◽  
Mark W. Hansen ◽  
R. K. Sink ◽  
Peter Kozodoy ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Injection-Locking of Blue Laser Diodes and Its Application to the Laser Cooling of Neutral Ytterbium Atoms

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5059-5062 ◽  
Author(s):  
Kaduki Komori ◽  
Yosuke Takasu ◽  
Mitsutaka Kumakura ◽  
Yoshiro Takahashi ◽  
Tsutomu Yabuzaki
Keyword(s):  
Laser Cooling ◽  
Laser Diodes ◽  
Injection Locking ◽  
Blue Laser

scholarly journals Analysis of optical injection on red and blue laser diodes for high bit-rate visible light communication

2019 ◽  
Vol 449 ◽  
pp. 79-85
Author(s):  
M.H.M. Shamim ◽  
M.A. Shemis ◽  
C. Shen ◽  
H.M. Oubei ◽  
O. Alkhazragi ◽  
...  
Keyword(s):  
Visible Light ◽  
Laser Diodes ◽  
Visible Light Communication ◽  
Blue Laser ◽  
Optical Injection ◽  
Bit Rate ◽  
High Bit Rate
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