Dynamic charge storage in 6H-silicon carbide: prospects for high-speed nonvolatile RAMs

1992 ◽  
Vol 39 (11) ◽  
pp. 2646-2647 ◽  
Author(s):  
J.A. Cooper ◽  
J.W. Palmour ◽  
C.T. Gardner ◽  
M.R. Melloch ◽  
C.H. Carter
Keyword(s):  
Silicon Carbide ◽  
High Speed ◽  
Charge Storage ◽  
Dynamic Charge

Dynamic Charge Storage in 6H-Silicon Carbide: Prospects for High-Speed Nonvolatile RAM's

2005 ◽  
Author(s):  
J.A. Cooper ◽  
J.W. Palmour ◽  
C.T. Gardned ◽  
M.R. Melloch ◽  
C.H. Carter
Keyword(s):  
Silicon Carbide ◽  
High Speed ◽  
Charge Storage ◽  
Dynamic Charge

Dynamic charge storage in 6H silicon carbide

1992 ◽  
Vol 61 (10) ◽  
pp. 1185-1186 ◽  
Author(s):  
C. T. Gardner ◽  
J. A. Cooper ◽  
M. R. Melloch ◽  
J. W. Palmour ◽  
C. H. Carter
Keyword(s):  
Silicon Carbide ◽  
Charge Storage ◽  
Dynamic Charge

Effect of Powder-Mixed Dielectric on EDM Process Performance

2020 ◽  
Vol 38 (8A) ◽  
pp. 1226-1235
Author(s):  
Safa R. Fadhil ◽  
Shukry. H. Aghdeab
Keyword(s):  
Silicon Carbide ◽  
High Speed ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
High Speed Steel ◽  
Transformer Oil ◽  
Dielectric Fluid ◽  
Peak Current ◽  
Powder Concentration ◽  
Pulse On Time

Electrical Discharge Machining (EDM) is extensively used to manufacture different conductive materials, including difficult to machine materials with intricate profiles. Powder Mixed Electro-Discharge Machining (PMEDM) is a modern innovation in promoting the capabilities of conventional EDM. In this process, suitable materials in fine powder form are mixed in the dielectric fluid. An equal percentage of graphite and silicon carbide powders have been mixed together with the transformer oil and used as the dielectric media in this work. The aim of this study is to investigate the effect of some process parameters such as peak current, pulse-on time, and powder concentration of machining High-speed steel (HSS)/(M2) on the material removal rate (MRR), tool wear rate (TWR) and the surface roughness (Ra). Experiments have been designed and analyzed using Response Surface Methodology (RSM) approach by adopting a face-centered central composite design (FCCD). It is found that added graphite-silicon carbide mixing powder to the dielectric fluid enhanced the MRR and Ra as well as reduced the TWR at various conditions. Maximum MRR was (0.492 g/min) obtained at a peak current of (24 A), pulse on (100 µs), and powder concentration (10 g/l), minimum TWR was (0.00126 g/min) at (10 A, 100 µs, and 10 g/l), and better Ra was (3.51 µm) at (10 A, 50 µs, and 10 g/l).

High-speed processing of silicon carbide ceramic by high repetition frequency femtosecond laser

2021 ◽  
Author(s):  
Jian Zhang ◽  
Feng Geng ◽  
Zhichao Liu ◽  
Qinghua Zhang ◽  
Qiao Xu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
High Speed ◽  
Repetition Frequency ◽  
Silicon Carbide Ceramic ◽  
High Repetition

Attritious Wear of Silicon Carbide

1976 ◽  
Vol 98 (4) ◽  
pp. 1125-1134 ◽  
Author(s):  
R. Komanduri ◽  
M. C. Shaw
Keyword(s):  
Silicon Carbide ◽  
Electron Microscope ◽  
High Temperature ◽  
High Speed ◽  
Layer By Layer ◽  
Wear Area ◽  
Work Material ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Boundary Fracture

Attritious wear of silicon carbide in simulated grinding tests against a cobalt base superalloy at high speed and extremely small feed rate was studied using a scanning electron microscope (SEM) and an auger electron spectroscope (AES). In many cases the wear area of silicon carbide was found to be concave rather than planar in shape. Several microcracks and grain boundary fracture were also observed. No evidence of metal build-up was observed on silicon carbide which was not the case with aluminum oxide. AES study of the rubbed surface on the work material and transmission electron microscope (TEM) investigation of the wear debris suggest that attritious wear of silicon carbide is due to one or more of the following mechanisms: 1 – Preferential removal of surface atoms on the abrasive, layer by layer, by oxidation under high temperature and a favorably directed shear stress; 2 – disassociation of silicon carbide at high temperature and (a) diffusion of silicon into the work material and formation of metal silicides and (b) diffusion of carbon into the work material and formation of unstable metal carbides (in the present case Ni3C and Co3C) which decompose during cooling to metal and carbon atoms; 3 – pinocoidal cleavage fracture of silicon carbide on basal planes c(0001) resulting in the removal of many micron-sized crystallites.

scholarly journals Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Energies ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1421
Author(s):  
Zhijun Li ◽  
Zuoxing Wang ◽  
Trillion Zheng ◽  
Hong Li ◽  
Bo Huang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Speed ◽  
Field Effect Transistors ◽  
Pwm Rectifier ◽  
Efficiency Optimization ◽  
Conversion System ◽  
Source Voltage ◽  
Pwm Rectifiers ◽  
The Impact ◽  
High Speed Switching

Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad application prospects in terms of efficiency and power density, inherited from the high-speed switching feature. However, high-speed switching also induces gate-source voltage interference, which impacts the overall character of the conversion system. This paper considered the impact of gate-source voltage interference on loss, revealing an efficiency optimization for all-SiC PWM rectifiers. Firstly, this paper theoretically investigated the mechanism of improving the conversion system efficiency by using the 4-pin Kelvin packaged SiC MOSFETs. Then, based on the industrial product case study, loss distribution, using different package styles, was quantitatively analyzed. Finally, experiment test results verified the efficiency improvement of the PWM rectifier with the 4-pin Kelvin package SiC MOSFETs.

Uniform silicon carbide doped Sb2Te nanomaterial for high temperature and high speed PCM applications

2016 ◽  
Vol 664 ◽  
pp. 591-594 ◽  
Author(s):  
Yun Meng ◽  
Qiuming She ◽  
Liangliang Cao ◽  
Yan Chen ◽  
Peigao Han ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Speed
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