Time-resolved investigations of field screening in InGaAs/InGaAlAs and InGaAs/InGaAsP multiple quantum well devices

1992 ◽  
Vol 39 (11) ◽  
pp. 2646
Author(s):  
T. Tutken ◽  
C. Vaterlein ◽  
A. Hangleiter ◽  
R.W. Glew ◽  
J.E. Whiteway
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Field Screening ◽  
Quantum Well Devices

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Carrier lifetimes in strained InGaAsP multiple-quantum-well laser structures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1017-1022 ◽  
Author(s):  
B. W. Takasaki ◽  
J. S. Preston ◽  
J. D. Evans ◽  
J. G. Simmons ◽  
S. Charbonneau ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Thermionic Emission ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Thermally Activated ◽  
Quantum Well Laser ◽  
Electron Escape ◽  
Multiple Quantum Well Laser

We have investigated carrier sweepout in a series of strained InGaAsP multiple quantum well laser structures by time-resolved photoconductivity and CW photoluminescence. The electrons and holes exhibit very different escape times: the electrons less than 0.5 ns and the holes greater than 10 ns. With only the built-in field across the wells, the electron escape is thermally activated in both tensile samples, while it is unclear whether tunneling or thermionic emission is the dominant escape mechanism in the unstrained and compressive samples. Application of a 2 V reverse bias is sufficient to produce efficient tunneling escape of electrons in the tensile samples. A simple model of the competition between thermionic emission and radiative recombination in the tensile wells yields values for the barrier height that are in agreement with the calculated values.

Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence

Luminescence Dynamics and Structural Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diodes

2011 ◽  
Vol 216 ◽  
pp. 445-449
Author(s):  
Zhen Sheng Lee ◽  
Ling Min Kong ◽  
Zhe Chuan Feng ◽  
Gang Li ◽  
Hung Lin Tsai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stokes Shift ◽  
Multiple Quantum Well ◽  
Blue Emission ◽  
Multiple Quantum ◽  
Spectroscopic Techniques ◽  
Time Resolved ◽  
Light Emitting ◽  
Indium Composition ◽  
Measurement Results

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopic techniques. Two typical samples are studied, both consisting of five periods of InGaN wells with different indium compositions of 21% and 24%, respectively. According to the PL and PLE measurement results, large values of activation energy and Stokes’ shift are obtained. This indicates that higher Indium composition results in an increase of composition fluctuation in the InGaN MQW region, showing the stronger carrier localization effect. The lifetime at the low-energy side of the InGaN peaks is longer for higher indium composition, as expected from the larger Stokes shift.

Semi-insulating Multiple Quantum Well Devices For Image Processing Applications

2005 ◽  
Author(s):  
A. Partovi ◽  
A.M. Glass ◽  
D.H. Olson ◽  
G.J. Zydzik ◽  
H.M. O'Bryan ◽  
...  
Keyword(s):  
Image Processing ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Devices
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