A new device structure and process flow for a low-leakage p-i-n diode-based integrated detector array

1991 ◽  
Vol 38 (12) ◽  
pp. 2696-2697
Author(s):  
W. Snoeys ◽  
J. Plummer ◽  
S. Parker ◽  
C. Kenney
Keyword(s):  
Detector Array ◽  
Device Structure ◽  
Process Flow ◽  
New Device ◽  
Low Leakage ◽  
Integrated Detector

Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

2019 ◽  
Vol 11 (6) ◽  
pp. 349-355 ◽  
Author(s):  
Weitao Cheng ◽  
Akinobu Teramoto ◽  
Tadahiro Ohmi
Keyword(s):  
Structure Design ◽  
Device Structure ◽  
New Device

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

2011 ◽  
Vol 1345 ◽  
Author(s):  
Yichun Zhou
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
High Speed ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Buffer Layers ◽  
Interface Properties ◽  
Si Substrate ◽  
Device Structure ◽  
Low Leakage

ABSTRACTFerroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO2/Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

1/fγ DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS

2004 ◽  
Vol 04 (02) ◽  
pp. L297-L307 ◽  
Author(s):  
JONGHWAN LEE ◽  
GIJS BOSMAN
Keyword(s):  
Drain Current ◽  
Trapping Efficiency ◽  
Doping Profile ◽  
Noise Model ◽  
Current Noise ◽  
Device Structure ◽  
Processing Technologies ◽  
New Device ◽  
Noise Characteristics ◽  
Ultrathin Oxide

A 1/fγ drain current noise model for deep-submicron MOSFETs with ultrathin oxide is presented. Based on the number and correlated mobility fluctuation mechanisms, the model is derived incorporating a tunneling assisted-thermally activated process and a more realistic trap distribution inside the gate oxide layer. The effects of the device structure and processing technologies on the noise characteristics are taken into consideration through a quadratic mobility degradation factor, a parasitic resistance, a doping profile, and trap-related parameters. For ultrathin oxide MOSFETs, the trapping efficiency ratio and the scattering rate are expressed in terms of the trap distance and the inversion carrier density, enabling an accurate prediction of the noise behavior. From quantitative results simulated with extracted data, it is shown that the new model is applicable to design future CMOS devices and new device processing technologies, and is suitable to be implemented in circuit simulators.

A Novel Structure Trench IGBT with Full Hole-Barrier Layer

2014 ◽  
Vol 543-547 ◽  
pp. 757-761
Author(s):  
Ling Ling Yang
Keyword(s):  
Temperature Coefficient ◽  
Barrier Layer ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Device Structure ◽  
New Device ◽  
Insulated Gate Bipolar Transistor ◽  
Novel Structure ◽  
First Time ◽  
Off Time

A Full Hole-barrier Trench gate Insulated Gate Bipolar Transistor (FH-TIGBT) device structure is proposed for the first time. Compared with Carrier Stored Trench IGBT (CSTBT), which adds a carrier stored n layer between p base and n base in Trench IGBT (TIGBT), the new structure appends an n region located in the bottom of the trench gate. The result of Process and device simulations shows that the proposed device has lowered saturation voltage and larger capability of carrying current compared to either conventional trench IGBT or CSTBT. And the characteristics of turn-off time and breakdown voltage have negligibly changed. Further more, it has strongly positive temperature coefficient of on-state voltage, which means paralleling is very simple for the new device.

ITO Contact Properties with Amorphous Silicon for AM-OLED Application

2007 ◽  
Vol 124-126 ◽  
pp. 423-426
Author(s):  
Jae Hong Jeon ◽  
Hee Hwan Choe ◽  
Jong Hyun Seo
Keyword(s):  
Amorphous Silicon ◽  
Hole Injection ◽  
Device Structure ◽  
Display Devices ◽  
New Device ◽  
Long Term Stability ◽  
Ito Film ◽  
High Work ◽  
Injection Property

In order to improve long term stability of a-Si:H TFT for AM-OLED application a new driving method compensating Vth shift requires a new device structure of which hole injection is enhanced. ITO film was investigated for the hole injection material because it is essential material for display devices and has high work function favorable for hole injection. From I-V characteristics of TFTs with two types of source and drain material, i.e. Cr and ITO, the contact properties were measured and compared. Although electron injection property of ITO was worse than Cr, hole injection property was comparable to that of Cr.

3D polymeric scaffolds towards biomedical applications

2020 ◽  
Author(s):  
◽  
Cheng Zhang
Keyword(s):  
Transition Temperature ◽  
Body Temperature ◽  
Shape Memory ◽  
Biomedical Applications ◽  
Electronic Devices ◽  
4D Printing ◽  
Device Structure ◽  
3D Structures ◽  
New Device ◽  
Polymeric Scaffolds

[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI--COLUMBIA AT REQUEST OF AUTHOR.] How can research on mechanical engineering and materials science contribute to human health? The fabrication of biomedical scaffolds could be a good entry point. Scaffolds are broadly applied in biomedical fields with multiple functions, such as repair, replacement, and stimulation and monitoring when they are integrated with electronic/optoelectronic devices. Besides biocompatible, the scaffolds should be soft and in form of three-dimensional (3D) structures in order to mechanically and geometrically match the natural tissues and organs. Polymers are the most promising candidate materials for the scaffold fabrication. Compared to metals and ceramics, substantial polymers have biocompatibility and all of them have low Young's modulus and high processability. Benefiting from the high processability, a variety of approaches can be used to shape polymeric scaffolds with 3D architectures. The major three approaches are flexibility, stress induced assembly, and printing. However, none of them is flawless: (1) For flexibility, the scaffolds that integrated with electronic devices have large thickness which exponentially lower the flexibility. (2) For stress-induced assembly, the assembly operation requires complicated actuation equipment and the assembled scaffolds are usually tethered on cumbersome elastomeric substrates. (3) For printing, few of scaffolds fabricated by emerging 4D printing technologies are responsive to biocompatible stimuli. This dissertation aims at addressing these three problems. First, a new device structure, i.e., lateral electrode, is proposed to reduce the thickness and then improve the flexibility of the scaffolds with electronics, which is validated by fabricating flexible photodetectors on polyimide substrates. The photodetectors have excellent flexibility and can be bent to 3D structures. Second, a new stress-induced assembly strategy, i.e., responsive buckling, is developed in which the elastomeric substrates are replaced with deft responsive polymeric substrates. Various 3D polymeric scaffolds either with or without electronic devices are assembled when the substrates are exposed to external stimuli without manual intervention. This strategy is first verified by an acetone responsive organogel and then developed toward biomedical applications by using a body temperature responsive hydrogel. Third, a new shape memory polymer, i.e., poly (glycerol dodecanoate) acrylate (PGDA), whose transition temperature is in the range of 20-37 [degrees]C, is exploited for 4D printing of scaffolds. Because of the propriate transition temperature, the shape memory process of the scaffolds can be completed by using room temperature and body temperature as stimuli, which are harmless for human body. Moreover, a variety of delicate 3D structures including an artery-like tube are printed.

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