Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors

1992 ◽  
Vol 39 (9) ◽  
pp. 2139-2146 ◽  
Author(s):  
J.S. Hamel ◽  
D.J. Roulston ◽  
C.R. Selvakumar ◽  
G.R. Booker
Keyword(s):  
Dimensional Analysis ◽  
Bipolar Transistors ◽  
Two Dimensional ◽  
Polysilicon Emitter

Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors

2007 ◽  
Vol 90 (4) ◽  
pp. 043510 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Kuei-Yi Chu ◽  
Li-Yang Chen ◽  
Lu-Ann Chen ◽  
Chun-You Chen
Keyword(s):  
Dimensional Analysis ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Two Dimensional
Sign in / Sign up

Export Citation Format

Share Document