Modeling of the low-frequency base resistance of single base contact bipolar transistors

M. Schroter

doi:10.1109/16.144691

Modeling of the low-frequency base resistance of single base contact bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.144691 ◽

1992 ◽

Vol 39 (8) ◽

pp. 1966-1968 ◽

Cited By ~ 15

Author(s):

M. Schroter

Keyword(s):

Low Frequency ◽

Bipolar Transistors ◽

Base Resistance ◽

Single Base ◽

Base Contact

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Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry

IEEE Transactions on Electron Devices ◽

10.1109/16.75164 ◽

1991 ◽

Vol 38 (3) ◽

pp. 538-544 ◽

Cited By ~ 46

Author(s):

M. Schroter

Keyword(s):

Low Frequency ◽

Bipolar Transistors ◽

Simulation And Modeling ◽

Base Resistance

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Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00059-7 ◽

2000 ◽

Vol 40 (11) ◽

pp. 1897-1903 ◽

Cited By ~ 6

Author(s):

J.A Chroboczek ◽

G Ghibaudo

Keyword(s):

Metal Oxide ◽

Heterojunction Bipolar Transistors ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Bipolar Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors

Proceedings International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1995.513958 ◽

2002 ◽

Cited By ~ 2

Author(s):

M. Tanabe ◽

H. Shimamoto ◽

T. Onai ◽

K. Washio

Keyword(s):

Bipolar Transistors ◽

Test Structure ◽

Distribution Model ◽

Base Resistance ◽

Resistance Components ◽

Base Electrode

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Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2565203 ◽

2016 ◽

Vol 63 (7) ◽

pp. 2691-2699 ◽

Cited By ~ 4

Author(s):

Vincenzo d'Alessandro ◽

Grazia Sasso ◽

Niccolo Rinaldi ◽

Klaus Aufinger

Keyword(s):

Bipolar Transistors ◽

Base Resistance

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Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis

10.1117/12.186749 ◽

1994 ◽

Author(s):

David Quon ◽

Yang H. Chang ◽

Gregory J. Sonek ◽

Guann-pyng Li

Keyword(s):

Noise Analysis ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise ◽

Base Current ◽

Polysilicon Emitter

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Qualifying of chip bonding operations in the process of fabrication of bipolar transistors by means of noise measurements in the low-frequency range

Microelectronics Reliability ◽

10.1016/0026-2714(91)90444-c ◽

1991 ◽

Vol 31 (1) ◽

pp. 208

Keyword(s):

Low Frequency ◽

Bipolar Transistors ◽

Frequency Range ◽

Noise Measurements

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Small-sized collector-up Ge/GaAs heterojunction bipolar transistors with high gain, low base resistance, and high f/sub max/

IEEE Electron Device Letters ◽

10.1109/55.285375 ◽

1994 ◽

Vol 15 (2) ◽

pp. 54-56 ◽

Cited By ~ 2

Author(s):

M. Kawanaka ◽

N. Iguchi ◽

A. Furukawa ◽

J. Sone

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Gain ◽

Bipolar Transistors ◽

Base Resistance

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Phase noise and a low-frequency noise reduction method in bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.595950 ◽

1997 ◽

Vol 44 (7) ◽

pp. 1180-1181 ◽

Cited By ~ 8

Author(s):

K. Takagi ◽

S. Serikawa ◽

T. Kurita

Keyword(s):

Noise Reduction ◽

Phase Noise ◽

Reduction Method ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise

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Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

10.7567/ssdm.1990.b-2-3 ◽

1990 ◽

Author(s):

T. Y. Kuo ◽

K. W. Goossen ◽

J. E. Cunningham ◽

C. G. Fonstad ◽

F. Ren ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Base Contact

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Analysis of the Transistor Tetrode-Based Determination of the Base Resistance Components of Bipolar Transistors—A Review

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2795707 ◽

2018 ◽

Vol 65 (3) ◽

pp. 820-828 ◽

Cited By ~ 1

Author(s):

Michael Schroter ◽

Andreas Pawlak

Keyword(s):

Bipolar Transistors ◽

Base Resistance ◽

Resistance Components

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