Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

1992 ◽  
Vol 39 (1) ◽  
pp. 50-55 ◽  
Author(s):  
L.P. Sadwick ◽  
D.C. Streit ◽  
W.L. Jones ◽  
C.W. Kim ◽  
R.J. Hwu
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Material Properties

The Effect of Rapid Thermal Annealing on the Electrical and Material Characteristics of Planar Doped and Uniformly Doped GaAs/AiGaAs/InGaAs Pseudomorphic HEMT Structures

1991 ◽  
Vol 240 ◽  
Author(s):  
T. E. Kazior ◽  
S. K. Brierley
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Material Properties ◽  
Structural Changes ◽  
Electrical Characteristics ◽  
Pl Spectra ◽  
Annealing Temperatures ◽  
Si Doping ◽  
Significant Change ◽  
Ingaas Quantum Well

ABSTRACTMBE grown GaAs/Al0.25Ga0.75As/In0.85Ga0.85 As structures were subjected to SiNx capped rapid thermal annealing and their electrical and material properties were characterized by Hall measurements and photoluminescence (PL). Low temperature (5°K) PL spectra from undoped structures annealed up to 900°C indicated negligible intermixing at the AIGaAs/lnGaAs interface. For planar doped structures (Nd≈5×1012/cm2) the Hall mobility began to decrease at anneal temperatures as low as 800°C with significant degradation observed for annealing temperatures at 850°C. This data is supported by PL spectra which indicate no significant change for samples annealed at 800°C. For the samples annealed at ≥ 850°C a large increase in the full width at half maximum of the transitions from the electron sub-bands of the InGaAs quantum well were observed, suggesting that the change in electrical characteristics is primarily due to diffusion of the Si doping pulse. In contrast. Hall measurement of uniformly doped structures reveal only small decreases in mobility and no significant change in sheet concentration for anneal temperatures up to 900°C and doping levels up to 2.5×1018/cm3. PL spectra reveal no structural changes.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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