scholarly journals Decreasing Electron Flux through the Cytochrome and/or Alternative Respiratory Pathways Triggers Common and Distinct Cellular Responses Dependent on Growth Conditions

2014 ◽  
Vol 167 (1) ◽  
pp. 228-250 ◽  
Author(s):  
Kristina Kühn ◽  
Guangkun Yin ◽  
Owen Duncan ◽  
Simon R. Law ◽  
Szymon Kubiszewski-Jakubiak ◽  
...  
Keyword(s):  
Electron Flux ◽  
Cellular Responses ◽  
Growth Conditions ◽  
Alternative Respiratory Pathways

scholarly journals Rpb4p, a Subunit of RNA Polymerase II, Mediates mRNA Export during Stress

2003 ◽  
Vol 14 (7) ◽  
pp. 2744-2755 ◽  
Author(s):  
Marganit Farago ◽  
Tal Nahari ◽  
Christopher Hammel ◽  
Charles N. Cole ◽  
Mordechai Choder
Keyword(s):  
Gene Expression ◽  
Rna Polymerase ◽  
Rna Polymerase Ii ◽  
Mrna Export ◽  
Optimal Growth ◽  
Cellular Responses ◽  
Growth Conditions ◽  
Stress Conditions ◽  
Major Mechanism ◽  
A Subunit

Changes in gene expression represent a major mechanism by which cells respond to stress. We and other investigators have previously shown that the yeast RNA polymerase II subunit Rpb4p is required for transcription under various stress conditions, but not under optimal growth conditions. Here we show that, in addition to its role in transcription, Rpb4p is also required for mRNA export, but only when cells are exposed to stress conditions. The roles of Rpb4p in transcription and in mRNA export can be uncoupled genetically by specific mutations in Rpb4p. Both functions of Rpb4p are required to maintain cell viability during stress. We propose that Rpb4p participates in the cellular responses to stress at the interface of the transcription and the export machineries.

Application of Genomics and Proteomics in Bioremediation

2016 ◽  
pp. 97-112 ◽  
Author(s):  
Amol Uttam Hivrale ◽  
Pankaj K. Pawar ◽  
Niraj R. Rane ◽  
Sanjay P. Govindwar
Keyword(s):  
Molecular Mechanism ◽  
Regulatory Network ◽  
Protein Composition ◽  
Cost Effective ◽  
Cellular Responses ◽  
Life Forms ◽  
Growth Conditions ◽  
Genomics And Proteomics ◽  
Gene Functions ◽  
Insight Into

Bioremediation mediated by microorganisms is proving to be cost effective, ecofriendly and sustainable technology. Genome enable experimental and modeling techniques are of a great help in evaluating physiology and enhancing performance of life forms to be used for bioremediation purpose. Similarly, the application of proteomics in bioremediation research provides a global view of the protein composition of microbial cell and offers promising approach to understand the molecular mechanism of removal of toxic material from the environment. Combination of proteomics and genomics in bioremediation is an insight into global metabolic and regulatory network that can enhance the understanding of gene functions. Present chapter give a bird's eye view of genomics and proteomics and their potential utilization in bioremediation and for the clearer understanding of the cellular responses to environmental stimuli. An understanding of the growth conditions governing the expression of proteome in a specific environment is essential for developing rational strategies for successful bioremediation.

The Response of Testis Cells to Low Dose X-Irradiation

1981 ◽  
Vol 39 ◽  
pp. 542-543
Author(s):  
D. E. Philpott ◽  
W. Sapp ◽  
C. Williams ◽  
Joann Stevenson ◽  
S. Black
Keyword(s):  
Electron Microscopy ◽  
Stem Cell ◽  
Light Microscopy ◽  
Dose Level ◽  
Cross Sections ◽  
Low Dose ◽  
Light And Electron Microscopy ◽  
Cellular Responses ◽  
Post Irradiation ◽  
X Irradiation

The response of spermatogonial cells to X-irradiation is well documented. It has been shown that there is a radiation resistent stem cell (As) which, after irradiation, replenishes the seminiferous epithelium. Most investigations in this area have dealt with radiation dosages of 100R or more. This study was undertaken to observe cellular responses at doses less than 100R of X-irradiation utilizing a system in which the tissue can be used for light and electron microscopy.Brown B6D2F1 mice aged 16 weeks were exposed to X-irradiation (225KeV; 15mA; filter 0.35 Cu; 50-60 R/min). Four mice were irradiated at each dose level between 1 and 100 rads. Testes were removed 3 days post-irradiation, fixed, and embedded. Sections were cut at 2 microns for light microscopy. After staining, surviving spermatogonia were identified and counted in tubule cross sections. The surviving fraction of spermatogonia compared to control, S/S0, was plotted against dose to give the curve shown in Fig. 1.

Electron-Channelling Patterns: Principles and Techniques

1976 ◽  
Vol 34 ◽  
pp. 400-401
Author(s):  
David C. Joy
Keyword(s):  
Crystal Structure ◽  
Electron Flux ◽  
Lattice Structure ◽  
Incident Beam ◽  
Bloch Wave ◽  
Crystalline Solid ◽  
Angle Of Incidence ◽  
Electron Channelling ◽  
Regular Arrangement ◽  
Backscattered Signals

In a crystalline solid the regular arrangement of the lattice structure influences the interaction of the incident beam with the specimen, leading to changes in both the transmitted and backscattered signals when the angle of incidence of the beam to the specimen is changed. For the simplest case the electron flux inside the specimen can be visualized as the sum of two, standing wave distributions of electrons (Fig. 1). Bloch wave 1 is concentrated mainly between the atom rows and so only interacts weakly with them. It is therefore transmitted well and backscattered weakly. Bloch wave 2 is concentrated on the line of atom centers and is therefore transmitted poorly and backscattered strongly. The ratio of the excitation of wave 1 to wave 2 varies with the angle between the incident beam and the crystal structure.

Anisotropy of damage productions in electron irradiated molybdenum

1978 ◽  
Vol 36 (1) ◽  
pp. 354-355
Author(s):  
K. Izui ◽  
S. Furuno ◽  
H. Otsu ◽  
T. Nishida ◽  
H. Maeta
Keyword(s):  
Electron Flux ◽  
Threshold Energy ◽  
High Energy ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
Displacement Threshold ◽  
The Mean ◽  
Channeling Effect ◽  
Different Origins ◽  
Threshold Energies

Anisotropy of damage productions in crystals due to high energy electron bombardment are caused from two different origins. One is an anisotropic displacement threshold energy, and the other is an anisotropic distribution of electron flux near the atomic rows in crystals due to the electron channeling effect. By the n-beam dynamical calculations for germanium and molybdenum we have shown that electron flux at the atomic positions are from ∽4 to ∽7 times larger than the mean incident flux for the principal zone axis directions of incident 1 MeV electron beams, and concluded that such a locally increased electron flux results in an enhanced damage production. The present paper reports the experimental evidence for the enhanced damage production due to the locally increased electron flux and also the results of measurements of the displacement threshold energies for the <100>,<110> and <111> directions in molybdenum crystals by using a high voltage electron microscope.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

The value of Electron Microscope studies of imperfect natural diamonds

1990 ◽  
Vol 48 (4) ◽  
pp. 194-195
Author(s):  
J C Walmsley ◽  
A R Lang
Keyword(s):  
Electron Microscope ◽  
Classification Scheme ◽  
Natural Diamond ◽  
Sudden Change ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Major Constituent ◽  
Natural Diamonds ◽  
Type Ia ◽  
Platelet Defects

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.

Role of the exosporial membrane in attachment and germination of C. sporogenes

1993 ◽  
Vol 51 ◽  
pp. 38-39
Author(s):  
B.J. Panessa-Warren ◽  
G.T. Tortora ◽  
J.B. Warren
Keyword(s):  
Enzymatic Degradation ◽  
Light Transmission ◽  
Extended Period ◽  
Growth Conditions ◽  
Clostridium Sporogenes ◽  
Radiation Chemical ◽  
Physical Trauma ◽  
Extended Contact ◽  
Cold Pressure

Some bacteria are capable of forming highly resistant spores when environmental conditions are not adequate for growth. Depending on the genus and species of the bacterium, these endospores are resistant in varying degrees to heat, cold, pressure, enzymatic degradation, ionizing radiation, chemical sterilants,physical trauma and organic solvents. The genus Clostridium, responsible for botulism poisoning, tetanus, gas gangrene and diarrhea in man, produces endospores which are highly resistant. Although some sporocides can kill Clostridial spores, the spores require extended contact with a sporocidal agent to achieve spore death. In most clinical situations, this extended period of treatment is not possible nor practical. This investigation examines Clostridium sporogenes endospores by light, transmission and scanning electron microscopy under various dormant and growth conditions, cataloging each stage in the germination and outgrowth process, and analyzing the role played by the exosporial membrane in the attachment and germination of the spore.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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