scholarly journals Erratum: Charged Point Defects in the Flatland: Accurate Formation Energy Calculations in Two-Dimensional Materials [Phys. Rev. X 4 , 031044 (2014)]

2018 ◽  
Vol 8 (3) ◽  
Author(s):  
Hannu-Pekka Komsa ◽  
Natalia Berseneva ◽  
Arkady V. Krasheninnikov ◽  
Risto M. Nieminen
Keyword(s):  
Point Defects ◽  
Formation Energy ◽  
Two Dimensional ◽  
Energy Calculations ◽  
Two Dimensional Materials ◽  
Charged Point

scholarly journals Charged Point Defects in the Flatland: Accurate Formation Energy Calculations in Two-Dimensional Materials

2014 ◽  
Vol 4 (3) ◽  
Author(s):  
Hannu-Pekka Komsa ◽  
Natalia Berseneva ◽  
Arkady V. Krasheninnikov ◽  
Risto M. Nieminen
Keyword(s):  
Point Defects ◽  
Formation Energy ◽  
Two Dimensional ◽  
Energy Calculations ◽  
Two Dimensional Materials ◽  
Charged Point

scholarly journals Limitations of empirical supercell extrapolation for calculations of point defects in bulk, at surfaces, and in two-dimensional materials

2022 ◽  
Vol 105 (1) ◽  
Author(s):  
Christoph Freysoldt ◽  
Jörg Neugebauer ◽  
Anne Marie Z. Tan ◽  
Richard G. Hennig
Keyword(s):  
Point Defects ◽  
Two Dimensional ◽  
Two Dimensional Materials

scholarly journals Formation energy and interaction of point defects in two-dimensional colloidal crystals

2007 ◽  
Vol 76 (3) ◽  
Author(s):  
L. C. DaSilva ◽  
L. Cândido ◽  
L. da F. Costa ◽  
Osvaldo N. Oliveira
Keyword(s):  
Point Defects ◽  
Formation Energy ◽  
Colloidal Crystals ◽  
Two Dimensional

Redox-Active Approach Towards New Magnetic And Conductive Two-Dimensional Materials

2018 ◽  
Author(s):  
Penny Perlepe ◽  
Rodolphe Clérac ◽  
Itziar Oyarzabal ◽  
Corine Mathonière
Keyword(s):  
Two Dimensional ◽  
Active Approach ◽  
Redox Active ◽  
Two Dimensional Materials

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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