scholarly journals Investigating crystal microstructure of niobium materials by an x-ray diffraction reciprocal space mapping technique

2014 ◽  
Vol 17 (1) ◽  
Author(s):  
Qiguang Yang ◽  
Frances Williams ◽  
Xin Zhao ◽  
Charles Reece ◽  
Mahadevan Krishnan
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Mapping Technique ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

Experimental and Theoretical Study of the Triple-Crystal High-Resolution X-Ray Diffraction Scheme in Reciprocal Space Mapping Technique

2019 ◽  
Vol 64 (4) ◽  
pp. 545-552 ◽  
Author(s):  
A. Yu. Seregin ◽  
P. A. Prosekov ◽  
F. N. Chukhovsky ◽  
Yu. A. Volkovsky ◽  
A. E. Blagov ◽  
...  
Keyword(s):  
High Resolution ◽  
Theoretical Study ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Mapping Technique ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

Preparation of epitaxial La1−xSrxMnO3 films on SrTiO3(001) by dipping-pyrolysis process

1997 ◽  
Vol 12 (2) ◽  
pp. 541-545 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
W. Kondo ◽  
S. Mizuta ◽  
T. Kumagai
Keyword(s):  
Heat Treatment ◽  
Single Crystals ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Pyrolysis Process ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Metallic Conduction ◽  
Conduction Behavior

La1−xSrxMnO3 (LSMO) (x = 0−0.3) films were prepared on SrTiO3(001) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were obtained by heat treatment at 800–1200 °C; the fluctuation of alignment of these films, evaluated by reciprocal-space mapping of asymmetric x-ray diffraction, was markedly small, as comparable to that of the substrates. The LSMO films with x = 0.1−0.3 showed metallic conduction behavior at 25–300 K, and the resistivity was as low as that of LSMO single crystals, e.g., 4.5 × 10−4 Ω · cm at 150 K for the film with x = 0.3.

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals Reciprocal Space Mapping of Epitaxial Materials Using Position-Sensitive X-ray Detection

1994 ◽  
Vol 38 ◽  
pp. 201-213 ◽  
Author(s):  
S. R. Lee ◽  
B. L. Doyle ◽  
T. J. Drummond ◽  
J. W. Medernach ◽  
P. Schneider
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
X Rays ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Rocking Curve ◽  
X Ray ◽  
Position Sensitive ◽  
Average Size ◽  
Short Time

Abstract Reciprocal space mapping can be efficiently carried out using a position-sensitive x-ray detector (PSD) coupled to a traditional double-axis diffractometer. The PSD offers parallel measurement of the total scattering angle of all diffracted x-rays during a single rocking-curve scan. As a result, a two-dimensional reciprocal space map can be made in a very short time similar to that of a one-dimensional rocking-curve scan. Fast, efficient reciprocal space mapping offers numerous routine advantages to the x-ray diffraction analyst. Some of these advantages arc the explicit differentiation of lattice strain from crystal orientation effects in strain-relaxed heteroepitaxial layers; the nondestructive characterization of the size, shape and orientation of nanocrystalline domains in ordered-alloy epilayers; and the ability to measure the average size and shape of voids in porous epilayers. Here, the PSD-based diffractometer is described, and specific examples clearly illustrating the advantages of complete reciprocal space analysis are presented.

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