scholarly journals Interplay of disorder and interactions in a flat-band supporting diamond chain

2020 ◽  
Vol 2 (4) ◽  
Author(s):  
Nilanjan Roy ◽  
Ajith Ramachandran ◽  
Auditya Sharma
Keyword(s):  
Flat Band

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

scholarly journals Silicon Carbide-Gated Nanofluidic Membrane for Active Control of Electrokinetic Ionic Transport

Membranes ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 535
Author(s):  
Antonia Silvestri ◽  
Nicola Di Trani ◽  
Giancarlo Canavese ◽  
Paolo Motto Ros ◽  
Leonardo Iannucci ◽  
...  
Keyword(s):  
Drug Delivery ◽  
Silicon Carbide ◽  
Power Consumption ◽  
Low Power ◽  
Electrochemical Impedance ◽  
Field Effect Transistors ◽  
External Control ◽  
Low Power Consumption ◽  
Flat Band ◽  
Ionic Field

Manipulation of ions and molecules by external control at the nanoscale is highly relevant to biomedical applications. We report a biocompatible electrode-embedded nanofluidic channel membrane designed for electrofluidic applications such as ionic field-effect transistors for implantable drug-delivery systems. Our nanofluidic membrane includes a polysilicon electrode electrically isolated by amorphous silicon carbide (a-SiC). The nanochannel gating performance was experimentally investigated based on the current-voltage (I-V) characteristics, leakage current, and power consumption in potassium chloride (KCl) electrolyte. We observed significant modulation of ionic diffusive transport of both positively and negatively charged ions under physical confinement of nanochannels, with low power consumption. To study the physical mechanism associated with the gating performance, we performed electrochemical impedance spectroscopy. The results showed that the flat band voltage and density of states were significantly low. In light of its remarkable performance in terms of ionic modulation and low power consumption, this new biocompatible nanofluidic membrane could lead to a new class of silicon implantable nanofluidic systems for tunable drug delivery and personalized medicine.

scholarly journals Gap generation and flat band catalysis in dice model with local interaction

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
E. V. Gorbar ◽  
V. P. Gusynin ◽  
D. O. Oriekhov
Keyword(s):  
Local Interaction ◽  
Flat Band ◽  
Dice Model

scholarly journals Flat-band topology of magic angle graphene on a transition metal dichalcogenide

2020 ◽  
Vol 102 (23) ◽  
Author(s):  
Tianle Wang ◽  
Nick Bultinck ◽  
Michael P. Zaletel
Keyword(s):  
Transition Metal ◽  
Flat Band ◽  
Magic Angle ◽  
Transition Metal Dichalcogenide

scholarly journals Fluctuation-frustrated flat band instabilities in NdNiO2

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Mi-Young Choi ◽  
Warren E. Pickett ◽  
Kwan-Woo Lee
Keyword(s):  
Flat Band

scholarly journals Spectroscopy of a tunable moiré system with a correlated and topological flat band

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xiaomeng Liu ◽  
Cheng-Li Chiu ◽  
Jong Yeon Lee ◽  
Gelareh Farahi ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Band Structure ◽  
Twist Angle ◽  
Bilayer Graphene ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Flat Band ◽  
Correlated Electron ◽  
Partial Filling ◽  
Valley Polarization ◽  
Spectroscopic Signatures

AbstractMoiré superlattices created by the twisted stacking of two-dimensional crystals can host electronic bands with flat energy dispersion in which enhanced interactions promote correlated electron states. The twisted double bilayer graphene (TDBG), where two Bernal bilayer graphene are stacked with a twist angle, is such a moiré system with tunable flat bands. Here, we use gate-tuned scanning tunneling spectroscopy to directly demonstrate the tunability of the band structure of TDBG with an electric field and to show spectroscopic signatures of electronic correlations and topology for its flat band. Our spectroscopic experiments are in agreement with a continuum model of TDBG band structure and reveal signatures of a correlated insulator gap at partial filling of its isolated flat band. The topological properties of this flat band are probed with the application of a magnetic field, which leads to valley polarization and the splitting of Chern bands with a large effective g-factor.

scholarly journals Interplay of quantum phase transition and flat band in hybrid lattices

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Gui-Lei Zhu ◽  
Hamidreza Ramezani ◽  
Clive Emary ◽  
Jin-Hua Gao ◽  
Ying Wu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Quantum Phase Transition ◽  
Quantum Phase ◽  
Flat Band

scholarly journals Design Study of a Round Window Piezoelectric Transducer for Active Middle Ear Implants

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 946
Author(s):  
Dong Ho Shin
Keyword(s):  
Hearing Loss ◽  
Sensorineural Hearing Loss ◽  
Middle Ear ◽  
Piezoelectric Transducer ◽  
Round Window ◽  
Piezoelectric Element ◽  
Sensorineural Hearing ◽  
Flat Band ◽  
Middle Ear Implants ◽  
Output Characteristics

This report describes the design of a new piezoelectric transducer for round window (RW)-driven middle ear implants. The transducer consists of a piezoelectric element, gold-coated copper bellows, silicone elastomer (polydimethylsiloxane, PDMS), metal cylinder (tungsten), and titanium housing. The piezoelectric element is fixed to the titanium housing and mechanical resonance is generated by the interaction of the bellows, PDMS, and tungsten cylinder. The dimensions of PDMS and the tungsten cylinder with output characteristics suitable for compensation of sensorineural hearing loss were derived by mechanical vibrational analysis (equivalent mechanical model and finite element analysis (FEA)). Based on the results of FEA, the RW piezoelectric transducer was implemented, and bench tests were performed under no-load conditions to confirm the output characteristics. The transducer generates an average displacement of 219.6 nm in the flat band (0.1–1 kHz); the resonance frequency is 2.3 kHz. To evaluate the output characteristics, the response was compared to that of an earlier transducer. When driven by the same voltage (6 Vp), the flat band displacement averaged 30 nm larger than that of the other transducer, and no anti-resonance was noted. Therefore, we expect that the new transducer can serve as an output device for hearing aids, and that it will improve speech recognition and treat high-frequency sensorineural hearing loss more effectively.

scholarly journals Emergent flat band electronic structure in a VSe2/Bi2Se3 heterostructure

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Turgut Yilmaz ◽  
Xiao Tong ◽  
Zhongwei Dai ◽  
Jerzy T. Sadowski ◽  
Eike F. Schwier ◽  
...  
Keyword(s):  
Dirac Point ◽  
Electronic States ◽  
Quantum States ◽  
Photoemission Spectroscopy ◽  
Flat Band ◽  
Strongly Correlated ◽  
Dirac Cone ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Topological Materials ◽  
Photoemission Study

AbstractFlat band electronic states are proposed to be a fundamental tool to achieve various quantum states of matter at higher temperatures due to the enhanced electronic correlations. However, materials with such peculiar electronic states are rare and often rely on subtle properties of the band structures. Here, by using angle-resolved photoemission spectroscopy, we show the emergent flat band in a VSe2 / Bi2Se3 heterostructure. Our photoemission study demonstrates that the flat band covers the entire Brillouin zone and exhibits 2D nature with a complex circular dichroism. In addition, the Dirac cone of Bi2Se3 is not reshaped by the flat band even though they overlap in proximity of the Dirac point. These features make this flat band distinguishable from the ones previously found. Thereby, the observation of a flat band in the VSe2 / Bi2Se3 heterostructure opens a promising pathway to realize strongly correlated quantum effects in topological materials.

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