scholarly journals Higher-order entanglement and many-body invariants for higher-order topological phases

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Yizhi You ◽  
Julian Bibo ◽  
Frank Pollmann
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
He Gao ◽  
Haoran Xue ◽  
Zhongming Gu ◽  
Tuo Liu ◽  
Jie Zhu ◽  
...  

AbstractTopological phases of matter are classified based on their Hermitian Hamiltonians, whose real-valued dispersions together with orthogonal eigenstates form nontrivial topology. In the recently discovered higher-order topological insulators (TIs), the bulk topology can even exhibit hierarchical features, leading to topological corner states, as demonstrated in many photonic and acoustic artificial materials. Naturally, the intrinsic loss in these artificial materials has been omitted in the topology definition, due to its non-Hermitian nature; in practice, the presence of loss is generally considered harmful to the topological corner states. Here, we report the experimental realization of a higher-order TI in an acoustic crystal, whose nontrivial topology is induced by deliberately introduced losses. With local acoustic measurements, we identify a topological bulk bandgap that is populated with gapped edge states and in-gap corner states, as the hallmark signatures of hierarchical higher-order topology. Our work establishes the non-Hermitian route to higher-order topology, and paves the way to exploring various exotic non-Hermiticity-induced topological phases.


Nanophotonics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 3881-3887
Author(s):  
Ankit Arora ◽  
Pramoda K. Nayak ◽  
Tejendra Dixit ◽  
Kolla Lakshmi Ganapathi ◽  
Ananth Krishnan ◽  
...  

AbstractWe report on multiple excitonic resonances in bilayer tungsten diselenide (BL-WSe2) stacked at different angles and demonstrate the use of the stacking angle to control the occurrence of these excitations. BL-WSe2 with different stacking angles were fabricated by stacking chemical vapour deposited monolayers and analysed using photoluminescence measurements in the temperature range 300–100 K. At reduced temperatures, several excitonic features were observed and the occurrences of these exitonic resonances were found to be stacking angle dependent. Our results indicate that by controlling the stacking angle, it is possible to excite or quench higher order excitations to tune the excitonic flux in optoelectronic devices. We attribute the presence/absence of multiple higher order excitons to the strength of interlayer coupling and doping effect from SiO2/Si substrate. Understanding interlayer excitations will help in engineering excitonic devices and give an insight into the physics of many-body dynamics.


2019 ◽  
Vol 100 (8) ◽  
Author(s):  
Martin Rodriguez-Vega ◽  
Abhishek Kumar ◽  
Babak Seradjeh

1970 ◽  
Vol 48 (2) ◽  
pp. 167-181 ◽  
Author(s):  
D. J. W. Geldart ◽  
Roger Taylor

An interpolation formula is suggested for the wave-number and density dependence of the static screening function for an interacting electron gas in its ground state. The approximate screening function simulates a number of properties of the exact screening function which have been established by analysis of its many-body perturbation expansion. The accuracy of the interpolation formula is discussed and is considered to be adequate for practical calculations in the range of intermediate metallic densities.


1985 ◽  
Vol 113 (1) ◽  
pp. 8-12 ◽  
Author(s):  
P.J. Knowles ◽  
K. Somasundram ◽  
N.C. Handy ◽  
K. Hirao

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