scholarly journals Role of fluctuations in the yielding transition of two-dimensional glasses

2020 ◽  
Vol 2 (2) ◽  
Author(s):  
Misaki Ozawa ◽  
Ludovic Berthier ◽  
Giulio Biroli ◽  
Gilles Tarjus
Keyword(s):  
2016 ◽  
Vol 18 (45) ◽  
pp. 30946-30953 ◽  
Author(s):  
Damien Magne ◽  
Vincent Mauchamp ◽  
Stéphane Célérier ◽  
Patrick Chartier ◽  
Thierry Cabioc'h

The role of the surface groups in chemical bonding in two dimensional Ti3C2is evidenced at the nano-object level.


1960 ◽  
Vol 82 (4) ◽  
pp. 921-927 ◽  
Author(s):  
Friedrich O. Ringleb

The conditions for the equilibrium of two vortexes in a two-dimensional flow through a duct or diffuser are derived. Potential-flow considerations and a few basic results from viscous-flow theory are used for the discussion of the role of cusps as separation control and trapping devices for standing vortexes. The investigations are applied to cusp diffusers especially with regard to the wind tunnel of the James Forrestal Research Center of Princeton University.


Langmuir ◽  
2000 ◽  
Vol 16 (11) ◽  
pp. 5199-5204 ◽  
Author(s):  
Szu-Wen Wang ◽  
Channing Robertson ◽  
Alice Gast ◽  
Sandy Koppenol ◽  
Todd Edwards ◽  
...  

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.


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