Identification of the Carbon Dangling Bond Center at the4H−SiC/SiO2Interface by an EPR Study in Oxidized Porous SiC

2004 ◽  
Vol 92 (1) ◽  
Author(s):  
J. L. Cantin ◽  
H. J. von Bardeleben ◽  
Y. Shishkin ◽  
Y. Ke ◽  
R. P. Devaty ◽  
...  
Keyword(s):  
Dangling Bond ◽  
Bond Center ◽  
Porous Sic

Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals

2005 ◽  
Vol 483-485 ◽  
pp. 273-276 ◽  
Author(s):  
Hans Jürgen von Bardeleben ◽  
J.L. Cantin ◽  
L. Ke ◽  
Y. Shishkin ◽  
Robert P. Devaty ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Atom ◽  
Spin Hamiltonian ◽  
Dangling Bond ◽  
Interface Defects ◽  
X Band ◽  
Interface Defect ◽  
Bond Center ◽  
Oxidized Porous Silicon ◽  
Hamiltonian Parameters

The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C3V symmetry, g//=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and AB//[001]=48G and superhyperfine (SHF) interaction with three equivalent Si neighbour atoms and TB//[001]=12.4G, allow us to attribute the center to a sp3 coordinated carbon dangling bond center, PbC.

scholarly journals Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface

2020 ◽  
Vol 116 (7) ◽  
pp. 071604 ◽  
Author(s):  
T. Umeda ◽  
T. Kobayashi ◽  
M. Sometani ◽  
H. Yano ◽  
Y. Matsushita ◽  
...  
Keyword(s):  
Dangling Bond ◽  
Bond Center

Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study

2006 ◽  
Vol 527-529 ◽  
pp. 1015-1018 ◽  
Author(s):  
J.L. Cantin ◽  
Hans Jürgen von Bardeleben
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Dissociation Energy ◽  
Vacuum Annealing ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Paramagnetic Resonance ◽  
Interface Defect ◽  
Bond Center ◽  
Electron Paramagnetic

Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon dangling bond center as the main paramagnetic interface defect in 3C, 4H, 6H-SiC/SiO2. We demonstrate that this defect, called PbC center, can be passivated by forming gas annealing at 400°C. We have measured the PbC density at annealed 4H- and 3C-SiC/SiO2 interfaces and attributed its reduction to the transformation of the dangling bonds into EPR inactive C-H bonds. We have also studied the reverse phenomenon occurring during vacuum annealing at temperatures ranging from 600°C up to 1000°C and have determined a dissociation energy of ≈4.3 eV for the 3C and 4H polytypes.

Paramagnetic Nitrogen Defects in Silicon Nitride

1992 ◽  
Vol 284 ◽  
Author(s):  
W. L. Warren ◽  
J. Kanicki ◽  
J. Robertson ◽  
E. H. Poindexte
Keyword(s):  
Silicon Nitride ◽  
Energy Level ◽  
Theoretical Calculations ◽  
Dangling Bond ◽  
Compositional Dependence ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Bond Center ◽  
Simple Exponential Function ◽  
Post Deposition

ABSTRACTThe photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiNx:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiNx:H films often become conducting following a high post-deposition anneal.

Determination of creep mechanisms in various silicon carbides via TEM

1986 ◽  
Vol 44 ◽  
pp. 484-487
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis
Keyword(s):  
Heat Exchangers ◽  
Sintered Material ◽  
Polycrystalline Material ◽  
Chemical Vapor ◽  
Graphite Substrate ◽  
Second Phase ◽  
Reaction Bonding ◽  
Creep Mechanisms ◽  
Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

ANALYSIS OF GAS PERMEABILITY FOR LIQUID PHASE-SINTERED POROUS SiC COMPACT

2014 ◽  
Vol 17 (8) ◽  
pp. 705-713 ◽  
Author(s):  
Hikaru Maeda ◽  
Yoshihiro Hirata ◽  
Soichiro Sameshima ◽  
Taro Shimonosono
Keyword(s):  
Liquid Phase ◽  
Gas Permeability ◽  
Porous Sic

Effect of Si Addition on Resistivity of Porous SiC-Si Composite for Heating Element Application

2015 ◽  
Vol 25 (5) ◽  
pp. 258-263
Author(s):  
Shinhee Jun ◽  
◽  
Wonjoo Lee ◽  
Young-Min Kong
Keyword(s):  
Heating Element ◽  
Porous Sic ◽  
Si Addition

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

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