Atomic Layer Growth on Al(111) by Ion Bombardment

2000 ◽  
Vol 85 (2) ◽  
pp. 326-329 ◽  
Author(s):  
Carsten Busse ◽  
Henri Hansen ◽  
Udo Linke ◽  
Thomas Michely
Keyword(s):  
Atomic Layer ◽  
Ion Bombardment ◽  
Layer Growth

Adatom formation and atomic layer growth on Al(111) by ion bombardment: experiments and molecular dynamics simulations

2001 ◽  
Vol 488 (3) ◽  
pp. 346-366 ◽  
Author(s):  
Carsten Busse ◽  
Cemal Engin ◽  
Henri Hansen ◽  
Udo Linke ◽  
Thomas Michely ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Layer Growth ◽  
Dynamics Simulations

Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

Ion Bombardment during Plasma-Assisted Atomic Layer Deposition

2013 ◽  
Vol 50 (13) ◽  
pp. 23-34 ◽  
Author(s):  
H. B. Profijt ◽  
W. M. M. Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Layer Deposition

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

2021 ◽  
Vol 39 (3) ◽  
pp. 032416
Author(s):  
Taguhi Yeghoyan ◽  
Vincent Pesce ◽  
Moustapha Jaffal ◽  
Gauthier Lefevre ◽  
Rémy Gassilloud ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Selective Deposition ◽  
Layer Deposition

scholarly journals Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 291
Author(s):  
Alberto Perrotta ◽  
Julian Pilz ◽  
Roland Resel ◽  
Oliver Werzer ◽  
Anna Maria Coclite
Keyword(s):  
Atomic Layer ◽  
Layer Growth ◽  
Growth Mode ◽  
Ex Situ ◽  
Native Oxide ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
X Ray ◽  
Crystallization Onset

Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a combination of spectroscopic ellipsometry and X-ray based techniques (diffraction, reflectivity, and fluorescence). Differently from the growth mode usually reported for thermal ALD ZnO (i.e., substrate-inhibited island growth), the effect of plasma surface activation resulted in a substrate-enhanced island growth. A transient region of accelerated island formation was found within the first 2 nm of deposition, resulting in the growth of amorphous ZnO as witnessed with grazing incidence X-ray diffraction. After the islands coalesced and a continuous layer formed, the first crystallites were found to grow, starting the layer-by-layer growth mode. High-temperature ALD ZnO layers were also investigated in terms of crystallization onset, showing that layers are amorphous up to a thickness of 3 nm, irrespective of the deposition temperature and growth orientation.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation

1991 ◽  
Vol 30 (Part 2, No. 1B) ◽  
pp. L106-L109 ◽  
Author(s):  
Shin Yokoyama ◽  
Takayuki Ishibashi ◽  
Masaaki Yamagami ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Uv Irradiation ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Growth

scholarly journals Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Chris Y. Yuan ◽  
David A. Dornfeld
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Flow ◽  
Scale Up ◽  
Atomic Layer ◽  
Development Stage ◽  
Layer Growth ◽  
Atomic Scale ◽  
Sustainability Analysis ◽  
Layer Deposition ◽  
Integrated Sustainability

Atomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high-κ dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.

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