scholarly journals New Universality of the Metal-Insulator Transition in an Integer Quantum Hall Effect System

1998 ◽  
Vol 80 (3) ◽  
pp. 580-583 ◽  
Author(s):  
D. N. Sheng ◽  
Z. Y. Weng
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

VARIOUS FACETS OF CHALKER–CODDINGTON NETWORK MODEL

2004 ◽  
Vol 18 (10) ◽  
pp. 385-391 ◽  
Author(s):  
VICTOR KAGALOVSKY ◽  
BARUCH HOROVITZ ◽  
YSHAI AVISHAI
Keyword(s):  
Network Model ◽  
Quantum Hall Effect ◽  
Nearest Neighbor ◽  
Quantum Hall ◽  
Localization Length ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spacing Distribution ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

We briefly discuss various applications of the Chalker–Coddington network model, starting with the original one, proposed to describe inter-plateaux transition in the integer quantum Hall effect (IQHE). Next, we present generalization appropriate for the IQHE allowing to include spin, and conclude with recent applications to dirty superconductors. We then describe how numerical calculations on an open network produce data for the localization length behavior in the metal-insulator transition, whereas calculations on the closed system allow elucidation of various levels statistics. We also discuss how numerical algorithm for systems with additional symmetries is modified in order to improve the accuracy. Finally, results for the nearest-neighbor spacing distribution in dirty superconductors are presented.

scholarly journals Three-dimensional quantum Hall effect and metal–insulator transition in ZrTe5

Nature ◽  
2019 ◽  
Vol 569 (7757) ◽  
pp. 537-541 ◽  
Author(s):  
Fangdong Tang ◽  
Yafei Ren ◽  
Peipei Wang ◽  
Ruidan Zhong ◽  
John Schneeloch ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Three Dimensional ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

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