Prewetting Transitions in a Near-Critical Metallic Vapor

1997 ◽  
Vol 78 (9) ◽  
pp. 1735-1738 ◽  
Author(s):  
V. F. Kozhevnikov ◽  
D. I. Arnold ◽  
S. P. Naurzakov ◽  
Michael E. Fisher
Keyword(s):  
Prewetting Transitions ◽  
Metallic Vapor

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

scholarly journals Periodic unmixing of a binary metallic vapor

2005 ◽  
Vol 72 (15) ◽  
Author(s):  
J. Maul ◽  
I. Strachnov ◽  
S. Karpuk ◽  
T. Schilling ◽  
A. Oelsner ◽  
...  
Keyword(s):  
Metallic Vapor

Quasi-2D and prewetting transitions of square-well fluids on a square-well substrate

2009 ◽  
Vol 107 (20) ◽  
pp. 2189-2200 ◽  
Author(s):  
Ashim K. Saha ◽  
Satya Pal Singh ◽  
Jayant K. Singh ◽  
Sang Kyu Kwak
Keyword(s):  
Square Well ◽  
Prewetting Transitions

Mesoscopic Model for the Condensation of a Metallic Vapor

2019 ◽  
Vol 2019 (2) ◽  
pp. 127-130
Author(s):  
A. E. Korenchenko ◽  
A. G. Vorontsov ◽  
B. P. Gel’chinskii
Keyword(s):  
Mesoscopic Model ◽  
Metallic Vapor

Diffusion of Metallic Vapor in Condensed Spark Discharges

1931 ◽  
Vol 37 (2) ◽  
pp. 217-218 ◽  
Author(s):  
Harvey A. Zinszer
Keyword(s):  
Spark Discharges ◽  
Metallic Vapor

scholarly journals Prewetting transitions of Ar and Ne on alkali-metal surfaces

1999 ◽  
Vol 60 (12) ◽  
pp. 9019-9025 ◽  
Author(s):  
Francesco Ancilotto ◽  
Flavio Toigo
Keyword(s):  
Alkali Metal ◽  
Metal Surfaces ◽  
Prewetting Transitions

Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 445-449 ◽  
Author(s):  
Takashi Oobo ◽  
Riichiro Takemura ◽  
Ken Sato ◽  
Michihiko Suhara ◽  
Yasuyuki Miyamoto ◽  
...  
Keyword(s):  
Energy Level ◽  
Layer Thickness ◽  
Vapor Phase ◽  
Resonant Tunneling ◽  
Vapor Phase Epitaxy ◽  
Tunneling Diodes ◽  
Level Width ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Metallic Vapor

Sensitized fluorescence in thallium induced in collisions with Hg(63P1) atoms

1978 ◽  
Vol 56 (7) ◽  
pp. 891-896 ◽  
Author(s):  
M. K. Wade ◽  
M. Czajkowski ◽  
L. Krause
Keyword(s):  
Cross Sections ◽  
Ground State ◽  
Excitation Transfer ◽  
Resonance Radiation ◽  
Resonance Fluorescence ◽  
Collisional Excitation ◽  
Vapor Mixture ◽  
Sensitized Fluorescence ◽  
Intensity Measurements ◽  
Metallic Vapor

The transfer of excitation from excited mercury atoms to ground-state thallium atoms was investigated using techniques of sensitized fluorescence. A Hg–Tl vapor mixture contained in a quartz cell was irradiated with Hg 2537 Å resonance radiation which caused the mercury atoms to become excited to the 63P1, state. Subsequent collisions between the Hg(63P1) and Tl(62P1/2) atoms resulted in the population of the 82S1/2, 62D, and 72S1/2 thallium states, whose decay gave rise to sensitized fluorescence of wavelengths 3231, 3520, 3776, and 5352 Å. Intensity measurements on the sensitized fluorescence and on the Hg 2537 Å resonance fluorescence, observed at right angles to the direction of excitation, yielded cross sections of 3.0, 0.3, and 0.05 Å2 for collisional excitation transfer from Hg(63P1) to the 82S1/2, 62D, and 72S1/2 states in thallium, respectively. The results are fully consistent with previously determined cross sections for excitation transfer in other binary metallic vapor systems.

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