Terahertz Spin Precession and Coherent Transfer of Angular Momenta in Magnetic Quantum Wells

1996 ◽  
Vol 77 (13) ◽  
pp. 2814-2817 ◽  
Author(s):  
S. A. Crooker ◽  
J. J. Baumberg ◽  
F. Flack ◽  
N. Samarth ◽  
D. D. Awschalom
Keyword(s):  
Quantum Wells ◽  
Spin Precession ◽  
Angular Momenta

scholarly journals Weak antilocalization and spin precession in quantum wells

1996 ◽  
Vol 53 (7) ◽  
pp. 3912-3924 ◽  
Author(s):  
W. Knap ◽  
C. Skierbiszewski ◽  
A. Zduniak ◽  
E. Litwin-Staszewska ◽  
D. Bertho ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Precession ◽  
Weak Antilocalization

Transfer of correlations from photons to electron excitations and currents induced in semiconductor quantum wells by non-classical twisted light

2021 ◽  
Author(s):  
Olga Tikhonova ◽  
Ekaterina N. Voronina
Keyword(s):  
Quantum Information ◽  
Quantum Wells ◽  
Correlated Electrons ◽  
Spatial Distributions ◽  
Angular Momenta ◽  
Semiconductor Quantum Wells ◽  
Twisted Light ◽  
Semiconductor System ◽  
Nanostructured Semiconductor ◽  
Electron Excitations

Abstract In this paper the excitations of collective electronic modes and currents induced in nanostructured semiconductor systems by two-mode quantum light with non-zero orbital angular momenta are investigated. Transfer of photon correlations to the excitations and currents induced in the semiconductor system is demonstrated. Birth of correlated electrons arising in the conduction band of the nanostructure due to the interaction with correlated photons of quantum light is found. Azimuthal and radial spatial distributions of the entangled electrons are established. The obtained results make possible to register the correlated electrons experimentally and to implement quantum information and nanoelectronics circuits in nanosystems using the found azimuthal and radial electron entanglement

Electrical control of spin precession in semiconductor quantum wells

2003 ◽  
Vol 16 (1) ◽  
pp. 99-103 ◽  
Author(s):  
G Salis ◽  
Y Kato ◽  
K Ensslin ◽  
D.C Driscoll ◽  
A.C Gossard ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Precession ◽  
Electrical Control ◽  
Semiconductor Quantum Wells

Quantum Hall Effect in AlGaAs and Graphite Quantum Dots

2013 ◽  
Vol 667 ◽  
pp. 1-9 ◽  
Author(s):  
Keshav N. Shrivastava
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Two Dimensional ◽  
Hall Resistivity ◽  
Angular Momenta ◽  
The Difference ◽  
Density Of Electrons

Abstract. The 30 nm wide quantum wells on a 4x4 mm2 piece of GaAs/AlGaAs are formed when the layers of GaAs are deposited on AlGaAs films. The two-dimensional density of electrons is 3x1011 cm-2 and the mobility is 32x106 cm2/Vs. In such a sample the Hall resistivity as a function of magnetic field is not a linear function. Hence a suitable theory to understand the Hall effect is formulated. We find that there are phase transitions as a function of temperature. There are lots of fractions of charge which are explained on the basis of spin and orbital angular momentum of the electron. The nano meter size films of graphite also show that the Hall resistivity is non-linear and shows steps as a function of magnetic field. We make an effort to understand the steps in the Hall effect resistivity of graphite with quantum wells formed on the surface. It is found that the fractions are in four categories, (i) the principal fractions which are determined by spin and orbital angular momenta, (ii) the resonances which occur at the difference between two values such as =1-2, (iii) two-particle states which occur at the sum of the two frequencies and (iv) there are clusters of electrons localized in some areas of the sample. The spin in the clusters is polarized so that it becomes NS which is not 1/2 but depends on the number N, of electrons in a cluster.

scholarly journals Anomalous spin precession and spin Hall effect in semiconductor quantum wells

2013 ◽  
Vol 88 (3) ◽  
Author(s):  
Xintao Bi ◽  
Peiru He ◽  
E. M. Hankiewicz ◽  
R. Winkler ◽  
Giovanni Vignale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Precession ◽  
Semiconductor Quantum Wells

scholarly journals Voltage-controlled spin precession in InAs quantum wells

2011 ◽  
Vol 26 (7) ◽  
pp. 075005 ◽  
Author(s):  
B Y Sun ◽  
P Zhang ◽  
M W Wu
Keyword(s):  
Quantum Wells ◽  
Spin Precession

Optically induced instability of spin precession in magnetic quantum wells

2003 ◽  
Vol 67 (3) ◽  
Author(s):  
F. Teppe ◽  
M. Vladimirova ◽  
D. Scalbert ◽  
T. Wojtowicz ◽  
J. Kossut
Keyword(s):  
Quantum Wells ◽  
Spin Precession ◽  
Optically Induced

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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