Direct Measurements of Free Crystal Growth in Deeply Undercooled Melts of Semiconducting Materials

1996 ◽  
Vol 77 (9) ◽  
pp. 1801-1804 ◽  
Author(s):  
D. Li ◽  
D. M. Herlach
1995 ◽  
Vol 398 ◽  
Author(s):  
Dieter M. Herlach

ABSTRACTTechniques of containerless processing are applied to undercool and solidify metals and alloys. These techniques allow direct measurements of both the undercooling and the crystal growth velocity. Experimental results are presented for studies of nucleation of metastable crystalline phases and quasicrystals. Measurements of the dendrite growth velocity as a function of undercooling are exemplified for dilute Ni-based alloys and intermetallics. The results are analysed within current theories of rapid crystal growth. Their consequences on the formation of grain refined microstructures are highlighted. In addition, recent experiments on the undercooling of magnetic alloys are discussed revealing the existence of long-range magnetic ordering in an undercooled melt.


2022 ◽  
Vol 201 ◽  
pp. 110861
Author(s):  
Zhenzhen Yan ◽  
Bin Xu ◽  
Jinfu Li ◽  
Lingti Kong

2011 ◽  
Vol 675-677 ◽  
pp. 995-998
Author(s):  
Zhen Wang ◽  
Ning Hui Wang ◽  
Tie Li

High quality magnesium oxide (MgO) single crystals have been grown by an arc-fusion method. Due to the hostile environment for observing the process occurring in the inner zone of the furnace, direct measurements on the arcs by conventional diagnostic method are practically impossible. Moreover, it has been proved that the control of the temperature field of the whole system is crucial to grow high-purityMgO single crystals with large and super-large sizes. However, very few studies have been carried out to investigate the correlation between the thermal behavior and MgO single crystal growth in the furnace. In present study, a transient 3D finite element model has been developed to depict melt/crystal interface and to find out the determining factors that affect the crystal growth rate and the growth direction. It is shown that the model gave a good description of the bath shape which agrees well with that of the solidified MgO in experiments. By the transient analysis, the trend and time delay of the temperature variation on the shell were also predicted.


2015 ◽  
Vol 12 (2) ◽  
pp. 237-251 ◽  
Author(s):  
Alexandre Godin ◽  
Marie Duquesne ◽  
Elena Palomo del Barrio ◽  
Junko Morikawa

Author(s):  
Dieter M. Herlach ◽  
Daniel Simons ◽  
Pierre-Yves Pichon

We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge 100− x Si x ( x  = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue ‘From atomistic interfaces to dendritic patterns’.


1995 ◽  
Vol 51 (6) ◽  
pp. 3422-3428 ◽  
Author(s):  
M. Barth ◽  
B. Wei ◽  
D. M. Herlach

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